DMN2004K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low On-Resistance: R = 550 m V = 4.5V D DS(ON) (max) GS V R (BR)DSS DS(ON) T = +25C A Low Gate Threshold Voltage 0.55 V = 4.5V 630mA GS Low Input Capacitance 20V 0.9 V = 1.8V 410mA GS Fast Switching Speed Low Input/Output Leakage Description ESD Protected up to 2KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation MOSFET has been designed to minimize the on- Halogen and Antimony Free. Green Device (Note 3) state resistance (R ) and yet maintain superior switching DS(ON) Qualified to AEC-Q101 standards for High Reliability performance, making it ideal for high efficiency power management applications. Mechanical Data Applications Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL DC-DC Converters Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Alloy 42 leadframe. e3 Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) SOT23 Drain D Gate ESD PROTECTED TO 2kV G S Gate Protection Source Diode Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN2004K-7 SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2004K Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Steady 630 T = +25C A mA Drain Current (Note 5) V = 4.5V I GS D State 450 T = +85C A Steady T = +25C 410 A Drain Current (Note 5) V = 1.8V I mA GS D State T = +85C 300 A Pulsed Drain Current (Note 6) I 1.5 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 350 mW D Thermal Resistance, Junction to Ambient R 357 C/W JA Operating and Storage Temperature Range T T -65 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 16V, V = 0V DSS DS GS Gate-Source Leakage I 1 A V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 1.0 V V = V , I = 250A GS(th) DS GS D V = 4.5V, I = 540mA GS D 0.4 0.55 Static Drain-Source On-Resistance R V = 2.5V, I = 500mA DS(ON) 0.5 0.70 GS D 0.7 0.9 V = 1.8V, I = 350mA GS D Forward Transfer Admittance 200 ms Y V =10V, I = 0.2A fs DS D Source Current 0.5 A I S Diode Forward Voltage (Note 7) 0.6 1 V V V = 0V, I = 500mA SD GS S DYNAMIC CHARACTERISTICS Input Capacitance 150 pF C iss V = 16V, V = 0V DS GS Output Capacitance C 25 pF oss f = 1.0MHz Reverse Transfer Capacitance C 20 pF rss Gate Resistance R 292 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge Q 0.9 g Gate-Source Charge Q 0.2 nC V = 15V, V = 4.5V, I = 0.5A gs DS GS D Gate-Drain Charge Q 0.2 gd Turn-On Delay Time 5.7 t D(on) Turn-On Rise Time 8.4 t r V = 8V, V = 15V, GS DS ns Turn-Off Delay Time 59.4 R = 6 , R = 30 t G L D(off) Turn-Off Fall Time t 37.6 f Body Diode Reverse Recovery Time t 5.5 ns I = 0.5A, dI/dt = -100A/s rr S Body Diode Reverse Recovery Charge Q 0.85 nC I = 0.5A, dI/dt = -100A/s rr S Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 2 of 6 July 2013 DMN2004K Diodes Incorporated www.diodes.com Document number: DS30938 Rev. 9 - 2