DMN2004TK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish Matte Tin annealed over Alloy 42 Low Input/Output Leakage leadframe. Solderable per MIL-STD-202, Method 208 ESD Protected up to 2kV Terminal Connections: See Diagram Lead Free By Design/RoHS Compliant (Note 1) Weight: 0.002 grams (approximate) Gree Device (Note 2) Qualified to AEC-Q101 standards for High Reliability Drain D SOT-523 Gate S Gate G Protection Source Diode Top View ESD PROTECTED TO 2kV Top View Equivalent Circuit Ordering Information (Note 3) Part Number Case Packaging DMN2004TK-7 SOT-523 3000/Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at DMN2004TK Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage 20 V V DSS Gate-Source Voltage 8 V V GSS Drain Current (Note 4) Steady T = 25C 540 A I mA D State 390 T = 85C A Pulsed Drain Current (Note 5) 1.5 A I DM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Units Total Power Dissipation (Note 4) P 150 mW D Thermal Resistance, Junction to Ambient 833 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 10A DSS GS D 0.8 300 nA V = 16V, V = 0V DS GS Zero Gate Voltage Drain Current I DSS 0.9 nA V = 20V, V = 0V DS GS Gate-Source Leakage I 1 A V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 0.5 1.0 V V V = V , I = 250A GS(th) DS GS D V = 4.5V, I = 540mA 0.4 0.55 GS D Static Drain-Source On-Resistance R 0.5 0.70 V = 2.5V, I = 500mA DS (ON) GS D 0.7 0.9 V = 1.8V, I = 350mA GS D Forward Transfer Admittance Y 200 ms V =10V, I = 0.2A fs DS D Diode Forward Voltage (Note 6) V 0.5 1.4 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS Input Capacitance C 150 pF iss V = 16V, V = 0V DS GS Output Capacitance C 25 pF oss f = 1.0MHz Reverse Transfer Capacitance C 20 pF rss SWITCHING CHARACTERISTICS Turn-On Delay Time 8.5 ns t d(on) Rise Time 9.1 ns t V = 10V, R = 47 , I = 200mA, r DD L D Turn-Off Delay Time 51 ns V = 4.5V, R = 10 t GEN G d(off) Fall Time 28 ns t f Notes: 4. Device mounted on FR-4 PCB. 5. Pulse width 10S, Duty Cycle 1% 6. Short duration pulse test used to minimize self-heating effect. 2 of 6 November 2010 DMN2004TK Diodes Incorporated www.diodes.com Document number: DS30936 Rev. 5 - 2 NEW PRODUCT