DMN2005UFG 20V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits I Max Low R ensures on state losses are minimized D DS(ON) BV R Max DSS DS(ON) T = +25C (Note 9) Small form factor thermally efficient package enables higher C density end products 4.6m V = 4.5V 50A GS 20V Occupies just 33% of the board area occupied by SO-8 enabling 8.7m V = 2.5V 36A GS smaller end product 100% UIS & Rg tested Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET is designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ) and yet maintain superior switching performance, making it Qualified to AEC-Q101 Standards for High Reliability DS(ON) ideal for high-efficiency power management applications. An Automotive-Compliant Part is Available Under Separate Datasheet (DMN2005UFGQ) Applications Mechanical Data Backlighting Power Management Functions Case: PowerDI 3333-8 DC-DC Converters Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 D Pin 1 S S S G G D D D D S Top View Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number Case Packaging DMN2005UFG-7 2,000/Tape & Reel PowerDI3333-8 DMN2005UFG-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2005UFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS T = +25C 50 C I A D 40 T = +70C Steady C Continuous Drain Current (Notes 6 & 9) V = 4.5V GS State T = +25C 18 A I A D 14 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 130 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 2.6 A S Avalanche Current , L = 0.2mH I 23.9 A AS Repetitive Avalanche Energy, L = 0.2mH E 58.4 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 1.05 W A D Steady State Thermal Resistance, Junction to Ambient (Note 5) 120 C/W R JA Total Power Dissipation (Note 6) 2.27 W T = +25C P A D Steady State Thermal Resistance, Junction to Ambient (Note 6) 55 R JA C/W Thermal Resistance, Junction to Case (Note 6) R 4.2 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 2 of 7 DMN2005UFG March 2019 Diodes Incorporated www.diodes.com Document number: DS36943 Rev. 4 - 2 ADVANCE INFORMATION ADVANCED INFORMATION