DMN2011UFDF-7 Diodes Incorporated

DMN2011UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications 2 ID MAX PCB Footprint of 4mm BV R DSS DS(ON) MAX T = +25C A Low Gate Threshold Voltage Low On-Resistance 11.7A 9.5m VGS = 4.5V 20V ESD Protected Gate 11m V = 2.5V 10.8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), Description please contact us or your local Diodes representative. DMN2011UFDF Marking Information Site 1 N2 = Product Type Marking Code YM = Date Code Marking N2 Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key Year 2016 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code D H I J K L M N O P R Aug Sep Oct Nov Dec Month Jan Feb Mar Apr May Jun Jul 8 9 O N D Code 1 2 3 4 5 6 7 Site 2 D5 = Product Type Marking Code YWX = Date Code Marking N2 Y = Year (ex: 0 = 2020) W = Week (ex: a = week 27 z represents week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key Year 2016 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code 6 0 1 2 3 4 5 6 7 8 9 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z 2 of 8 February 2020 DMN2011UFDF www.diodes.com Diodes Incorporated Datasheet number: DS37734 Rev. 2 - 2 ADVANCE INFORMATION YWX YM