DMN2028UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications I Max D 2 BV R Max DSS DS(ON) PCB Footprint of 4mm T = +25C A Low Gate Threshold Voltage 25m V = 4.5V 7.9A GS Fast Switching Speed ESD Protected Gate 29m V = 2.5V 7.2A GS 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 39m V = 1.8V 6.1A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 95m V = 1.5V 4.0A GS Mechanical Data Description Case: U-DFN2020-6 (Type F) This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic, Green Molding Compound. (R ) and yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Applications Weight: 0.0065 grams (Approximate) Battery Management Application Power Management Functions DC-DC Converters U-DFN2020-6 (Type F) D e4e4 G Gate Protection ESD PROTECTED S Diode Pin Out Top View Bottom View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Reel Size (inches) Quantity per Reel DMN2028UFDF-7 7 3,000 DMN2028UFDF-13 13 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2028UFDF Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 20 V V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 7.9 A I A D State 6.3 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS TA = +25C 9.4 t<5s A I D 7.5 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 40 A I DM Continuous Source-Drain Diode Current T = +25C 2 A A I S Avalanche Current (Note 7) L = 0.1mH I 12 A AS Avalanche Energy (Note 7) L = 0.1mH E 8 mJ AS Thermal Characteristics Characteristic Symbol Value Unit T = +25C 0.66 A Total Power Dissipation (Note 5) W P D 0.42 T = +70C A Steady state 186 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<5s 135 2.03 TA = +25C Total Power Dissipation (Note 6) P W D 1.31 T = +70C A Steady state 64 Thermal Resistance, Junction to Ambient (Note 6) R JA t<5s 43 C/W Thermal Resistance, Junction to Case (Note 6) Steady state 18 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 20V, V = 0V J DSS DS GS Gate-Source Leakage 10 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.5 1.0 V V = V , I = 250A GS(TH) DS GS D 15 25 V = 4.5V, I = 4A GS D 18 29 V = 2.5V, I = 4A GS D Static Drain-Source On-Resistance m R DS(ON) 24 39 V = 1.8V, I = 4A GS D 35 95 V = 1.5V, I = 4A GS D Forward Transfer Admittance 18 S Y V = 5V, I = 12A fs DS D Diode Forward Voltage 0.7 1.0 V V V = 0V, I = 5A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 907 C iss V = 10V, V = 0V, DS GS Output Capacitance 98 pF C oss f = 1.0MHz Reverse Transfer Capacitance 38 C rss 194 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 9.8 Total Gate Charge (V = 4.5V) Q GS g 18 Total Gate Charge (V = 8V) Q GS g nC V = 10V, I = 6.5A DS D 1.5 Gate-Source Charge Q gs 1.8 Gate-Drain Charge Q gd 56 Turn-On Delay Time tD(ON) Turn-On Rise Time 87 t V = 10V, V = 4.5V, R DS GS ns Turn-Off Delay Time 632 R = 6, R = 10, I = 1A t G L D D(OFF) Turn-Off Fall Time 239 t F Reverse Recovery Time 143 ns t I = 4A, di/dt = 100A/s RR F Reverse Recovery Charge Q - 136 nC I = 4A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 December 2015 DMN2028UFDF www.diodes.com Diodes Incorporated Datasheet number: DS37937 Rev. 2 - 2 NEW PRODUCT