DMN2028USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D Low Input Capacitance V R max (BR)DSS DS(on) T = +25C A Fast Switching Speed (Note 6) Low Output Leakage 20m V = 4.5V 9.8A GS ESD Protected Up to 2kV 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 28m V = 2.5V 8.3A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance Case: SO-8 (R ) and yet maintain superior switching performance, making it DS(on) Case Material: Molded Plastic, Green Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Battery charging Terminal Connections: See Diagram Below Power management functions Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 DC-DC converters Weight: 0.074 grams (approximate) Portable power adaptors D S D SO-8 S D G S D D G Gate Protection S Diode ESD PROTECTED TO 2kV Top View Top View Equivalent Circuit Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN2028USS-13 N2028US 13 12 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2028USS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source voltage V 20 DSS V Gate-Source voltage V 12 GS (Note 6) 9.8 Continuous Drain current V = 4.5V T = +70C (Note 6) I 7.9 GS A D (Note 5) 7.3 A Pulsed Drain current V = 4.5V (Note 7) I 45.0 GS DM Continuous Source current (Body diode) (Note 6) I 6.0 S Pulsed Source current (Body diode) (Note 7) I 45.0 SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.56 (Note 5) Power dissipation 12.5 W P D Linear derating factor 2.81 mW/C (Note 6) 22.5 (Note 5) 80.0 Thermal Resistance, Junction to Ambient R JA (Note 6) 44.5 C/W Thermal Resistance, Junction to Lead (Note 8) 37.0 R JL Operating and storage temperature range T , T -55 to +150 C J STG Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Same as note (5), except the device is measured at t 10 sec. 7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300s. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 7 October 2013 DMN2028USS Diodes Incorporated www.diodes.com Document number: DS32075 Rev. 4 - 2 ADVANCE INFORMATION