DMN2065UWQ 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D BV R max DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 56m V = 4.5V 2.8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 65m V = 2.5V GS 2.6A Halogen and Antimony Free. Green Device (Note 3) 20V 93m V = 1.8V 2.2A GS The DMN2065UWQ is suitable for automotive applications 140m V = 1.5V 1.8A GS requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. DMN2065UWQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 2.8 A A I D State 2.3 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 3.1 A t<10s I A D 2.6 T = +70C A Steady T = +25C 2.2 A I A D State 1.7 T = +70C A Continuous Drain Current (Note 6) V = 1.8V GS T = +25C 2.4 A t<10s A I D 1.9 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 30 A DM Maximum Body Diode Forward Current (Note 5) I 1.2 A S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.43 W D Steady State 296 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 252 C/W Total Power Dissipation (Note 6) 0.7 W P D Steady State 178 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 151 C/W Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 1mA DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 20V, V = 0V C DSS DS GS Gate-Source Leakage 1 A I V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.35 1 V V V = V , I = 250A GS(th) DS GS D 52 56 V = 4.5V, I = 2A GS D 59 65 V = 2.5V, I = 2A GS D Static Drain-Source On-Resistance m R DS(on) 60 93 V = 1.8V, I = 1A GS D 75 140 V = 1.5V, I = 0.5A GS D Forward Transfer Admittance Y 7 S V = 5V, I = 3.8A fs DS D Diode Forward Voltage 0.7 1 V VSD VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 400 pF Ciss V = 10V, V = 0V, DS GS Output Capacitance 73.8 pF C oss f = 1MHz Reverse Transfer Capacitance 65.6 pF C rss Total Gate Charge 5.4 nC Q g V = 4.5V, V = 10V, GS DS Gate-Source Charge 0.7 nC Q gs I = 6A D Gate-Drain Charge 1.4 nC Q gd Turn-On Delay Time t 3.5 ns D(on) Turn-On Rise Time t 9.7 ns R V = 10V, V = 5V, DD GS Turn-Off Delay Time t 23.8 ns R = 1.7, R = 6 D(off) L G Turn-Off Fall Time t 7.2 ns F Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 June 2021 DMN2065UWQ Diodes Incorporated www.diodes.com Document number: DS36988 Rev. 3 - 2 NEW PRODUCT