X-On Electronics has gained recognition as a prominent supplier of DMN2065UWQ-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN2065UWQ-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN2065UWQ-7 Diodes Incorporated

DMN2065UWQ-7 electronic component of Diodes Incorporated
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Part No.DMN2065UWQ-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFETBVDSS: 8V-24V
Datasheet: DMN2065UWQ-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.368 ea
Line Total: USD 0.37 
Availability - 7946
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1576
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 5
Multiples : 5
5 : USD 0.16
50 : USD 0.1286
150 : USD 0.1152
500 : USD 0.0984
3000 : USD 0.091
6000 : USD 0.0865

7946
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.368
10 : USD 0.2449
100 : USD 0.1277
1000 : USD 0.115
3000 : USD 0.0897
9000 : USD 0.0863

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the DMN2065UWQ-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN2065UWQ-7 and other electronic components in the MOSFETs category and beyond.

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DMN2065UWQ 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D BV R max DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 56m V = 4.5V 2.8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 65m V = 2.5V GS 2.6A Halogen and Antimony Free. Green Device (Note 3) 20V 93m V = 1.8V 2.2A GS The DMN2065UWQ is suitable for automotive applications 140m V = 1.5V 1.8A GS requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. DMN2065UWQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 2.8 A A I D State 2.3 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 3.1 A t<10s I A D 2.6 T = +70C A Steady T = +25C 2.2 A I A D State 1.7 T = +70C A Continuous Drain Current (Note 6) V = 1.8V GS T = +25C 2.4 A t<10s A I D 1.9 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 30 A DM Maximum Body Diode Forward Current (Note 5) I 1.2 A S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.43 W D Steady State 296 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 252 C/W Total Power Dissipation (Note 6) 0.7 W P D Steady State 178 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 151 C/W Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 1mA DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 20V, V = 0V C DSS DS GS Gate-Source Leakage 1 A I V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.35 1 V V V = V , I = 250A GS(th) DS GS D 52 56 V = 4.5V, I = 2A GS D 59 65 V = 2.5V, I = 2A GS D Static Drain-Source On-Resistance m R DS(on) 60 93 V = 1.8V, I = 1A GS D 75 140 V = 1.5V, I = 0.5A GS D Forward Transfer Admittance Y 7 S V = 5V, I = 3.8A fs DS D Diode Forward Voltage 0.7 1 V VSD VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 400 pF Ciss V = 10V, V = 0V, DS GS Output Capacitance 73.8 pF C oss f = 1MHz Reverse Transfer Capacitance 65.6 pF C rss Total Gate Charge 5.4 nC Q g V = 4.5V, V = 10V, GS DS Gate-Source Charge 0.7 nC Q gs I = 6A D Gate-Drain Charge 1.4 nC Q gd Turn-On Delay Time t 3.5 ns D(on) Turn-On Rise Time t 9.7 ns R V = 10V, V = 5V, DD GS Turn-Off Delay Time t 23.8 ns R = 1.7, R = 6 D(off) L G Turn-Off Fall Time t 7.2 ns F Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 June 2021 DMN2065UWQ Diodes Incorporated www.diodes.com Document number: DS36988 Rev. 3 - 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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