DMN2120UFCL 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max Typical Off Board Profile of 0.6mm - Ideally Suited for Thin D BV R Max DSS DS(ON) T = +25C Applications A Low R Minimizes Conduction Losses 1.8A DS(ON) 100m V = 4.5V GS 20V 2 PCB Footprint of 2.56mm 1.5A 140m V = 2.5V GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching performance, DS(ON) Case: U-DFN1616-6 making it ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Lead Free Plating (NiPdAu Finish over Copper Leadframe). e4 Power Management Functions Terminals: Solderable per MIL-STD-202, Method 208 Load Switch Weight: 0.003 grams (Approximate) U-DFN1616-6 (Type K) Pin 1 Pin 1 ESD PROTECTED Top View Pin-Out Top View Bottom View Device Symbol Ordering Information (Note 4) Part Number Case Packaging DMN2120UFCL-7 U-DFN1616-6 (Type K) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2120UFCL Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 1.8 A Continuous Drain Current (Note 6) V = 4.5V I A GS D State 1.4 T = +70C A Pulsed Drain Current (380s Pulse, 1% Duty Cycle) (Note 7) 10 A I DM Maximum Continuous Body Diode Forward Current (Note 6) 0.7 A I S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.45 Power Dissipation (Note 5) P W D 270 Thermal Resistance, Junction to Ambient T = +25C (Note 5) R C/W A JA Power Dissipation (Note 6) P 1.16 W D 108 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 6) R A JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 16V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.3 1.0 V V = V , I = 250A GS(TH) DS GS D 57 100 VGS = 4.5V, ID = 3.6A 69 140 Static Drain-Source On-Resistance R m V = 2.5V, I = 3.1A DS(ON) GS D 74 200 V = 1.8V, I = 1A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.6A SD GS S DYNAMIC CHARACTERISTICS (Note 9) 130 Input Capacitance C pF iss V = 10V, V = 0V, DS GS 26 Output Capacitance C pF oss f = 1.0MHz 18 Reverse Transfer Capacitance C pF rss 2.7 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 1.4 Total Gate Charge (V = 4.5V) Q nC GS g Total Gate Charge (V = 10V) Q 2.8 nC GS g V = 10V, I = 3.6A DS D Gate-Source Charge 0.1 nC Q gs Gate-Drain Charge 0.5 nC Q gd Turn-On Delay Time t 0.6 ns D(ON) Turn-On Rise Time t 2.7 ns V = 10V, V = 4.5V, R DD GS Turn-Off Delay Time t 4.2 ns I = 1A, R = 6, R = 10 D(OFF) D G L Turn-Off Fall Time t 1.7 ns F Body Diode Reverse Recovery Time t 10 ns RR I = 4A, dI/dt = 100A/s F Body Diode Reverse Recovery Charge Q 1.0 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMN2120UFCL July 2019 Diodes Incorporated www.diodes.com Document number: DS40585 Rev. 3 - 2 ADVNAENWC EP RINOFDOURCMT ATION