DMN2300UFB4-7B Diodes Incorporated

Name: DMN2300UFB4-7B
Brand: Diodes Incorporated
SKU: DMN2300UFB47B_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

DMN2300UFB4-7B electronic component of Diodes Incorporated

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DMN2300UFB4-7B MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN2300UFB4-7B MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	DMN2300UFB4-7B
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	N-Channel 20 V 1.3A (Ta) 500mW (Ta) Surface Mount X2-DFN1006-3
Datasheet:	DMN2300UFB4-7B Datasheet (PDF)

Price (USD)

10: USD 0.1272 ea
Line Total: USD 1.27

Availability : 843

Ship by Thu. 18 Sep to Tue. 23 Sep

Qty Unit Price
10 $ 0.1272
100 $ 0.1006
300 $ 0.0654
1000 $ 0.0521
5000 $ 0.0467
10000 $ 0.0438

DMN2300UFB4-7B More Buying Options & Price Grid(s)

Please wait...

Availability

Price (USD)

Buy Price

Quantity

Availability 43001

Ship by Tue. 09 Sep to Thu. 11 Sep

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 0.4625
10 $ 0.2812
100 $ 0.1704
500 $ 0.1155
1000 $ 0.0902
2500 $ 0.0891
5000 $ 0.0781
10000 $ 0.0627

Availability 843900

Ship by Thu. 11 Sep to Wed. 17 Sep

MOQ : 10000
Multiples : 10000

Qty Unit Price
10000 $ 0.0645
20000 $ 0.0634
30000 $ 0.058
50000 $ 0.0564
70000 $ 0.0551

Availability 843

Ship by Thu. 18 Sep to Tue. 23 Sep

MOQ : 10
Multiples : 10

Qty Unit Price
10 $ 0.1272
100 $ 0.1006
300 $ 0.0654
1000 $ 0.0521
5000 $ 0.0467
10000 $ 0.0438

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

1.3 A 1.3 A

Vds - Drain-Source Breakdown Voltage

20 V 20 V

Rds On - Drain-Source Resistance

175 mOhms 175 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

450 mV 450 mV

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

500 mW 500 mW

Mounting Style

Smd/Smt Smd/Smt

Package / Case

X2 - DFN1006 - 3 X2 - DFN1006 - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

4.5 V 4.5 V

Qg - Gate Charge

1.6 nC 1.6 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Series

Dmn2300 Dmn2300

Transistor Type

1 N - Channel 1 N - Channel

Brand

Diodes Incorporated Diodes Incorporated

Cnhts

8541290000 8541290000

Fall Time

13 ns 13 ns

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Rise Time

2.8 ns 2.8 ns

Factory Pack Quantity :

10000 10000

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-Off Delay Time

38 ns 38 ns

Typical Turn-On Delay Time

3.5 ns 3.5 ns

Notes:- Show Stocked Products With Similar Attributes.

DMN2300UFB4-7B Alternative Parts

We are delighted to provide the DMN2300UFB4-7B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN2300UFB4-7B and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The DMN2300UFB4-7B is a low-cost, surface mount MOSFET (metal oxide semiconductor field-effect transistor) from Diodes Incorporated. It features an N-channel, 20 V, 1.3 A (Ta) 500 mW (Ta) rating, and is packaged in an X2-DFN1006-3 package. This MOSFET is suitable for general-purpose switching and level shifting applications, as well as for use in a variety of on/off circuits. The DMN2300UFB4-7B has a very low on-resistance and is optimized for a wide operating temperature range of -55°C to +150°C. It is able to withstand up to 20 V and has a maximum power dissipation of 500 mW. This part is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Qty	Unit Price
10	$ 0.1272
100	$ 0.1006
300	$ 0.0654
1000	$ 0.0521
5000	$ 0.0467
10000	$ 0.0438

Qty	Unit Price
1	$ 0.4625
10	$ 0.2812
100	$ 0.1704
500	$ 0.1155
1000	$ 0.0902
2500	$ 0.0891
5000	$ 0.0781
10000	$ 0.0627

Qty	Unit Price
10000	$ 0.0645
20000	$ 0.0634
30000	$ 0.058
50000	$ 0.0564
70000	$ 0.0551

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