DMN24H3D5L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage I D V R (BR)DSS DS(ON) Low Input Capacitance T = +25C A 3.5 V = 10V 0.48A Fast Switching Speed GS 240V 0.48A 3.5 V = 4.5V Small Surface Mount Package GS 0.37A 6.0 V = 3.3V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching Case: SOT23 DS(ON) performance, making it ideal for high efficiency power management Case Material: Molded Plastic UL Flammability Classification applications. Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 e3 Applications Lead-Free Plating (Matte Tin Finish Annealed over Alloy 42 DC-DC Converters Leadframe). Power Management Functions Terminal Connections: See Diagram Battery Operated Systems and Solid-State Relays Weight: 0.008 grams (Approximate) Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D SOT23 D G S G S Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN24H3D5L-7 SOT23 3,000/Tape & Reel DMN24H3D5L-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN24H3D5L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 240 V DSS Gate-Source Voltage 20 V VGSS Steady T = +25C 0.48 A Continuous Drain Current (Note 6) V = 10V I A GS D State 0.39 T = +70C A Pulsed Drain Current (10s pulse, duty cycle 1%) I 1.9 A DM Maximum Body Diode Continuous Current (Note 6) I 1.5 A S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 0.76 Total Power Dissipation P W D (Note 6) 1.26 (Note 5) 163 Thermal Resistance, Junction to Ambient R JA (Note 6) 99 C/W (Note 6) Thermal Resistance, Junction to Case R 31 JC Operating and Storage Temperature Range T T -55 to 150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 240 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 192V, V = 0V DSS DS GS Gate-Body Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.0 1.95 2.5 V V = V , I = 250A GS(th) DS GS D 1.5 3.5 V = 10V, I = 0.3A GS D Static Drain-Source On-Resistance R 1.5 3.5 V = 4.5V, I = 0.2A DS(ON) GS D 1.7 6.0 V = 3.3V, I = 0.1A GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 0.3A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 188 C iss V = 25V, V = 0V, DS GS Output Capacitance 11 pF C oss f = 1.0MHz 8 Reverse Transfer Capacitance C rss 3.86 Gate Resistance R VDS = 0V, VGS = 0V, f = 1.0MHz g 6.6 Total Gate Charge Q g V = 192V, V = 10V, DS GS 0.8 Gate-Source Charge Q nC gs I = 0.5A D 2.1 Gate-Drain Charge Q gd Turn-On Delay Time 2.3 tD(on) Turn-On Rise Time 2.0 t V = 60V, R =200 r DS L nS Turn-Off Delay Time 21 V = 10V, R = 25 t GS G D(off) Turn-Off Fall Time 7.2 t f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 January 2015 DMN24H3D5L Diodes Incorporated www.diodes.com Document number: DS37270 Rev. 3 - 2 ADVANCED INFORMATION NEW PRODUCT