DMN2990UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D BV R Max DSS DS(ON) T = +25C A Low Gate Threshold Voltage Low Input Capacitance 0.99 V = 4.5V 0.78A GS Fast Switching Speed 1.2 V = 2.5V 0.71A 20V GS Low Input/Output Leakage Ultra-Small Surface Mount Package 0.58A 1.8 V = 1.8V GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: X1-DFN1006-3 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound ideal for high-efficiency power-management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Battery Charging Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish NiPdAu over Copper Leadframe Solderable DC-DC Converters per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) D X1-DFN1006-3 S G D G Gate S Protection ESD protected Gate Top View Bottom View Diode Package Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN2990UFB-7B X1-DFN1006-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2990UFB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 0.78 A Continuous Drain Current (Note 6) V = 4.5V I A GS D State 0.62 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 0.72 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 1.5 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.52 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 239 C/W JA Total Power Dissipation (Note 6) P 0.92 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 137 C/W JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current (T = +25C) I 100 nA V = 16V, V = 0V J DSS DS GS Gate-Source Leakage I 1 A V = 5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 0.74 1.0 V V = V , I = 250A GS(TH) DS GS D 496 990 V = 4.5V, I = 100mA GS D Static Drain-Source On-Resistance R 606 1200 m V = 2.5V, I = 50mA DS(ON) GS D 761 1800 V = 1.8V, I = 20mA GS D Diode Forward Voltage 0.8 1.0 V V V = 0V, I = 150mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 31 pF C iss V = 15V, V = 0V, DS GS Output Capacitance 3.6 pF C oss f = 1.0MHz Reverse Transfer Capacitance 2.5 pF C rss Gate Resistance 187 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 0.41 nC g V =4.5V, V = 10V, GS DS Gate-Source Charge Q 0.06 nC gs I = 250mA D Gate-Drain Charge Q 0.05 nC gd Turn-On Delay Time t 4.5 ns D(ON) Turn-On Rise Time 3.5 ns t V = 15V, V = 4.5V, R DD GS Turn-Off Delay Time 24 ns R = 2, I = 200mA t G D D(OFF) Turn-Off Fall Time 12 ns t F Reverse Recovery Time 7.1 ns t RR I = 200mA, di/dt = 100A/s F Reverse Recovery Charge 1.2 nC Q RR Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN2990UFB July 2018 Diodes Incorporated www.diodes.com Document number: DS39019 Rev. 3 - 2