DMN2991UDA-7B Diodes Incorporated

DMN2991UDA-7B electronic component of Diodes Incorporated
DMN2991UDA-7B Diodes Incorporated
DMN2991UDA-7B MOSFETs
DMN2991UDA-7B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DMN2991UDA-7B MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN2991UDA-7B MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. DMN2991UDA-7B
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 8V 24V X2-DFN0806-6 T&R 10K
Datasheet: DMN2991UDA-7B Datasheet (PDF)
Price (USD)
1: USD 0.4625 ea
Line Total: USD 0.46 
Availability - 15954
  
Ship by Mon. 28 Jul to Wed. 30 Jul
QtyUnit Price
1$ 0.4625
10$ 0.2812
100$ 0.1704
500$ 0.1155
1000$ 0.0924
2500$ 0.0902
5000$ 0.0781
10000$ 0.0627

Availability 538
Ship by Wed. 06 Aug to Mon. 11 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.202
50$ 0.1596
150$ 0.1038
500$ 0.0826
2500$ 0.0741
5000$ 0.0697


Availability 15954
Ship by Mon. 28 Jul to Wed. 30 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4625
10$ 0.2812
100$ 0.1704
500$ 0.1155
1000$ 0.0924
2500$ 0.0902
5000$ 0.0781
10000$ 0.0627

   
Manufacturer
Product Category
Category
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMN2991UDA-7B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN2991UDA-7B and other electronic components in the MOSFETs category and beyond.

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DMN2991UDA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max Low On-Resistance D BV R Max DSS DS(ON) T = +25C Very Low Gate Threshold Voltage, 1.0V Maximum A Low Input Capacitance 0.99 V = 4.5V 0.45A GS Fast Switching Speed 1.2 V = 2.5V 0.40A GS 20V Ultra-Small Surface Mount Package 0.8mm x 0.6mm 1.8 V = 1.8V 0.34A GS ESD Protected Gate 2.4 V = 1.5V 0.30A GS Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Halogen and Antimony Free. Green Device (Note 3 ) Description and Applications This MOSFET is designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Case: X2-DFN0806-6 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 General Purpose Interfacing Switch Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish NiPdAu over Copper Leadframe Solderable Analog Switch per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) Pin1 G S D 1 2 2 D1 D2 G1 G2 ESD PROTECTED Gate Protection Gate Protection S1 S2 Diode Diode D S G 1 1 2 Pin Configuration Top View Bottom View Device Symbol Top View Ordering Information (Note 4) Part Number Case Packaging DMN2991UDA-7B X2-DFN0806-6 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2991UDA Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS 0.45 T = +25C Steady A Continuous Drain Current (Note 5) A I D State 0.36 T = +70C A Pulsed Drain Current (Note 6) 1.2 A IDM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.31 W P D Thermal Resistance, Junction to Ambient (Note 5) Steady State 404 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 16V, V = 0V C DSS DS GS Gate-Source Leakage I 10 A V = 5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 0.78 1.0 V V = V , I = 250A GS(TH) DS GS D 0.47 0.99 V = 4.5V, I = 100mA GS D 0.63 1.2 V = 2.5V, I = 50mA GS D Static Drain-Source On-Resistance R DS(ON) 0.84 1.8 V = 1.8V, I = 20mA GS D 1.1 2.4 VGS = 1.5V, ID = 10mA Diode Forward Voltage 0.6 1.0 V V V = 0V, I = 10mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 21.5 pF iss V = 16V, V = 0V, DS GS Output Capacitance C 4.9 pF oss f = 1.0MHz Reverse Transfer Capacitance C 3.7 pF rss Gate Resistance R 0.94 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge 0.35 nC Q g V = 4.5V, V = 10V, GS DS Gate-Source Charge 0.07 nC Q I = 250mA gs D Gate-Drain Charge 0.08 nC Q gd Turn-On Delay Time 5.6 ns t D(ON) V = 10V, V = 4.5V, DD GS Turn-On Rise Time 4.9 ns t R R = 47, R = 10, L g Turn-Off Delay Time 60.6 ns t D(OFF) I = 200mA D Turn-Off Fall Time 27.6 ns t F Reverse Recovery Time t 12.3 ns I = 1.0A, di/dt = 100A/s RR F Reverse Recovery Charge Q 1.1 nC I = 1.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN2991UDA May 2019 Diodes Incorporated www.diodes.com Document number: DS41328 Rev. 2 - 2 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT ADVANCE INFORMATION

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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