DMN3009SSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D BV R max DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 5.5m V = 10V 15A GS 100% Unclamped Inductive Switching (UIS) Test in Production 30V Ensures More Reliable and Robust End Application 7.5m V = 4.5V 12A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (R ) yet maintain superior switching performance, making it ideal DS(ON) Case: SO-8 for high-efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Motor Control Moisture Sensitivity: Level 3 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Below Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) SO-8 D S D S D S D G G D S Top View Top View Internal Schematic Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN3009SSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN3009SSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 15 A Continuous Drain Current (Note 6) V = 10V I A GS D State 12 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 80 A I DM Maximum Continuous Body Diode Forward Current (Note 6) 2.7 A I S Avalanche Current (Note 7) L = 0.1mH 33 A I AS Avalanche Energy (Note 7) L = 0.1mH 55 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Steady State Total Power Dissipation (Note 5) 1.4 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 101 C/W R JA Total Power Dissipation (Note 6) Steady State 1.8 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 6) Steady State 73 R JA C/W Thermal Resistance, Junction to Case (Note 6) 7.6 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 30 V BVDSS VGS = 0V, ID = 250A Zero Gate Voltage Drain Current 1 A I V = 30V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1 1.5 2.5 V V V = V , I = 250A GS(TH) DS GS D 4.5 5.5 V = 10V, I = 15A GS D Static Drain-Source On-Resistance R m DS(ON) 5.5 7.5 V = 4.5V, I = 15A GS D Diode Forward Voltage 0.75 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 2,000 pF iss V = 15V, V = 0V, DS GS 315 Output Capacitance C pF oss f = 1.0MHz 247 Reverse Transfer Capacitance C pF rss 2.2 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz g DS GS 20 nC Total Gate Charge (VGS = 4.5V) Qg 42 nC Total Gate Charge (V = 10V) Q GS g V = 15V, I = 15A DS D Gate-Source Charge 4.7 nC Q gs Gate-Drain Charge 7.4 nC Q gd Turn-On Delay Time 3.9 ns t D(ON) Turn-On Rise Time 4.1 ns t V = 15V, V = 10V, R DD GS 31 Turn-Off Delay Time t ns R = 3.3, I = 15A D(OFF) G D 15 Turn-Off Fall Time t ns F 15 Reverse Recovery Time t ns RR I = 15A, di/dt = 100A/s F 6.0 Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMN3009SSS August 2019 Diodes Incorporated www.diodes.com Document number: DS40792 Rev. 4 - 2