DMN3020UTS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage I max D BV R max DSS DS(ON) Low On-Resistance T = +25C C ESD Protected Gate 20m V = 4.5V 15A GS 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 25m V = 2.5V 14A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET is designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) Case: TSSOP-8 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Battery Management Application Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Lead DC-DC Converters Frame. Solderable per MIL-STD-202, Method 208 Weight: 0.039 grams (Approximate) D TSSOP-8 D S G S D S D ESD PROTECTED G D Gate Protection S Diode Pin1 Top View Bottom View Pin Out Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN3020UTS-13 TSSOP-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3020UTS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 6.8 A I A D State 5.4 T = +70C A Continuous Drain Current (Note 7) V = 4.5V GS Steady T = +25C 15 C A I D State 12 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A DM Continuous Source-Drain Diode Current (Note 7) A I S Pulsed Source-Drain Diode Current (10s Pulse, Duty Cycle = 1%) I A SM Avalanche Current (Note 8) L = 0.1mH I A AS Avalanche Energy (Note 8) L = 0.1mH mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 0.85 W A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 150 C/W R JA Total Power Dissipation (Note 6) T = +25C P 1.4 W A D Thermal Resistance, Junction to Ambient (Note 6) Steady State 90 R JA C/W Thermal Resistance, Junction to Case (Note 6) R 17 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 30V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.4 1.0 V V = V , I = 250A GS(TH) DS GS D 15 20 V = 4.5V, I = 4.5A GS D Static Drain-Source On-Resistance 18 25 m RDS(ON) VGS = 2.5V, ID = 3.5A 25 50 V = 1.8V, I = 2.0A GS D Diode Forward Voltage 0.8 1.2 V V V = 0V, I = 1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 1304 C iss V = 15V, V = 0V, DS GS Output Capacitance 87 pF C oss f = 1.0MHz Reverse Transfer Capacitance 80 C rss 1.3 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 15 Total Gate Charge (V = 4.5V) Q GS g 27 Total Gate Charge (V = 8V) Q GS g nC V = 15V, I = 4.5A DS D 2.0 Gate-Source Charge Q gs 2.1 Gate-Drain Charge Qgd 4.1 Turn-On Delay Time t D(ON) Turn-On Rise Time 4.8 t V = 15V, V = 4.5V, R DS GS ns Turn-Off Delay Time 20.5 R = 1, I = 4.5A t G D D(OFF) Turn-Off Fall Time 3.2 t F Reverse Recovery Time 7.1 ns t RR I = 1.0A, di/dt = 100A/s F Reverse Recovery Charge Q 1.7 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMN3020UTS July 2017 Diodes Incorporated www.diodes.com Document number: DS39580 Rev. 2 - 2