DMN3022LFG Green 30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type D) Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production Low On-Resistance Device BV R max DSS DS(ON) Low Input Capacitance Q1 30V 22m V = 5V, I = 10A GS D Fast Switching Speed Q2 30V 8m V = 5V, I = 10A GS D Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching performance, DS(ON) Case: PowerDI 3333-8 (Type D) making it ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram Analog Switch Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.044 grams (Approximate) PowerDI3333-8 (Type D) Pin1 D1 S1/D2 D1 S1/D2 S2 G1 S1/D2 S1/D2 G2 Top View Bottom View Top View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN3022LFG-7 PowerDI3333-8 (Type D) 1000 / Tape & Reel DMN3022LFG-13 PowerDI3333-8 (Type D) 3000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMN3022LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Q1 Q2 Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 10 V GSS T = +25C 15 C A I D 12 T = +70C C Continuous Drain Current V = 5V GS T = +25C 7.6 A I A D 6.1 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 50 100 A DM Avalanche Current (Note 6) L = 0.1mH I 24 43 A AS Avalanche Energy (Note 6) L = 0.1mH 28 92 mJ EAS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.96 T = +25C A Total Power Dissipation W P D 1.25 T = +70C A Steady State 64 Thermal Resistance, Junction to Ambient (Note 5) R JA t < 10s 36 C/W 8.7 Thermal Resistance, Junction to Case (Note 5) R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 20V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 1.4 2.1 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 16 22 m V = 5V, I = 10A DS(ON) GS D Forward Transfer Admittance Y 17 S V = 5V, I = 8A fs DS D Diode Forward Voltage V 0.84 1 V V = 0V, I = 8A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 370 Input Capacitance C 481 iss V = 15V, V = 0V, DS GS Output Capacitance 176 228 pF C oss f = 1.0MHz Reverse Transfer Capacitance 8.2 10.6 C rss V = 0V, V = 0V, f = DS GS Gate Resistance R 2.5 6.5 g 1.0MHz 2.8 3.7 Total Gate Charge (V = 4.5V) Q GS g 0.35 Total Gate Charge at V Q TH g(TH) nC V = 15V, I = 8A DS D 0.6 Gate-Source Charge Q gs 0.5 Gate-Drain Charge Q gd 4.5 Turn-On Delay Time t 6.7 D(ON) 1.8 Turn-On Rise Time tR V = 15V, V = 4.5V, DD GS ns Turn-Off Delay Time 7.2 10.8 I = 8A, R = 2 t D G D(OFF) Turn-Off Fall Time 1.9 t F Reverse Recovery Time 11.5 ns t RR I = 8A, di/dt = 300A/s F Reverse Recovery Charge 6.9 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 10 DMN3022LFG May 2018 Diodes Incorporated www.diodes.com Document number: DS40096 Rev. 2 - 2