NOT RECOMMENDED FOR NEW DESIGN USE DMN3025LSS DMN3052LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance Fast Switching Speed 30m V = 10V 7.1A GS Low Input/Output Leakage 40m V = 4.5V 6.2A 30V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 63m V = 2.5V 4.9A GS Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state Case: SO-8 resistance (R ) and yet maintain superior switching DS(on) Case Material: Molded Plastic,Gree Molding Compound. performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Backlighting Terminals: Finish Matte Tin annealed over Copper Power Management Functions leadframe. Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.074 grams (approximate) D S D SO-8 S D G S D G D S TOP VIEW Top View Equivalent circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN3052LSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN USE DMN3025LSS DMN3052LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 12 V GSS T = +25C Drain Current (Note 5) Steady A 7.1 A I D State 5.7 T = +70C A Pulsed Drain Current (Note 6) 28 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 2.5 W D Thermal Resistance, Junction to Ambient (Note 5) R 50 C/W JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS 80 V = 12V, V = 0V GS DS Gate-Source Leakage I nA GSS 800 V = 19V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.62 0.9 1.2 V V V = V , I = 250 A GS(th) DS GS D 24 30 V = 10V, I = 7.1A GS D Static Drain-Source On-Resistance R 30 40 m V = 4.5V, I = 6.4A DS (ON) GS D 50 63 V = 2.5V, I = 5.0A GS D Forward Transconductance g 10 S V = 5V, I = 5.1A fs DS D Diode Forward Voltage (Note 7) 0.78 1.16 V V V = 0V, I = 2.1A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance 555 pF C iss V = 5V, V = 0V DS GS Output Capacitance 109 pF C oss f = 1.0MHz Reverse Transfer Capacitance 82 pF C rss Notes: 5. Device mounted on 2 oz copper pad layout with R = 50C/W. JA 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 2 of 6 December 2013 DMN3052LSS Diodes Incorporated www.diodes.com Document number: DS31583 Rev. 5 - 3