DMN33D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 3 V = 4.5V 250 mA GS ESD Protected Gate to 2kV 30V 5 V = 4.0V 200 mA GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 7 V = 2.5V 100 mA GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) Case: SOT363 ideal for high efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminal Connections Indicator: See diagram Power Management Functions Terminals: Finish Matte Tin annealed over Alloy42 leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 e3 Backlighting Weight: 0.006 grams (approximate) SOT363 D G S 1 2 2 Q Q 1 2 ESD PROTECTED S G D 1 1 2 Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN33D8LDW-7 SOT363 3K/Tape & Reel DMN33D8LDW-13 SOT363 10K/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN33D8LDW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 250 A mA Continuous Drain Current (Note 5) V = 4.5V I GS D State 200 T = +70C A Maximum Continuous Body Diode Forward Current (Note 5) I 0.5 A S Pulsed Drain Current (10s pulse, duty cycle=1%) I 0.8 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 0.35 A Total Power Dissipation (Note 5) P W D T = +70C 0.22 A Steady State Thermal Resistance, Junction to Ambient (Note 5) R 360 JA C/W Thermal Resistance, Junction to Case R 126 JC Operating and Storage Temperature Range C T T -55 to 150 J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 30V, V = 0V C DSS DS GS Gate-Source Leakage 10 A I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 0.8 1.5 V V V = 3V, I = 100 A GS(th) DS D 2.4 V = 10V, I = 250mA GS D 3.0 V = 4.5V, I = 250mA GS D Static Drain-Source On-Resistance 5.0 R V = 4.0V, I = 10mA DS(ON) GS D 7.0 V = 2.5V, I = 5mA GS D 20 V = 1.8V, I = 5mA GS D Forward Transfer Admittance Y 10 - mS V = 3V, I = 10mA fs DS D Diode Forward Voltage V 1.2 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 7) 48 Input Capacitance C pF iss V = 5V, V = 0V, DS GS 11 Output Capacitance C pF oss f = 1.0MHz Reverse Transfer Capacitance C 8 pF rss Gate Resistance 57 f=1MHz , Vgs=0V, Vds=0V R g 0.55 nC Total Gate Charge (V = 4.5V) Q GS g V = 10V, V = 10V, GS DS 1.23 nC Total Gate Charge (V = 10V) Q GS g I = 250mA D Gate-Source Charge Q 0.14 nC gs Gate-Drain Charge Q 0.14 nC gd Turn-On Delay Time t 2.9 ns D(on) Turn-On Rise Time t 2.6 ns r V = 30V, V = 10V, DD GS Turn-Off Delay Time t 18.2 ns R = 25 , I = 200mA D(off) G D Turn-Off Fall Time t 13.6 ns f Notes: 5. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 August 2014 DMN33D8LDW Diodes Incorporated www.diodes.com Document number: DS36754 Rev. 3 - 2 NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION