DMN3401LDW-13 Diodes Incorporated

DMN3401LDW-13 electronic component of Diodes Incorporated
DMN3401LDW-13 Diodes Incorporated
DMN3401LDW-13 MOSFETs
DMN3401LDW-13  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DMN3401LDW-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN3401LDW-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. DMN3401LDW-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 25V-30V
Datasheet: DMN3401LDW-13 Datasheet (PDF)
Price (USD)
5: USD 0.1458 ea
Line Total: USD 0.73 
Availability - 29
  
Ship by Thu. 07 Aug to Tue. 12 Aug
QtyUnit Price
5$ 0.1458
50$ 0.1428
150$ 0.1056
500$ 0.0937

Availability 29
Ship by Thu. 07 Aug to Tue. 12 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1458
50$ 0.1428
150$ 0.1056
500$ 0.0937

   
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We are delighted to provide the DMN3401LDW-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN3401LDW-13 and other electronic components in the MOSFETs category and beyond.

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DMN3401LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Dual N-Channel MOSFET I max D Device BV R max DSS DS(ON) Low On-Resistance T = +25C A Low Input Capacitance 0.4 V = 10V 0.8A GS N- Fast Switching Speed 30V ESD Protected Gate Channel 0.7 V = 4.5V GS 0.57A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. DMN3401LDW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 0.8 A A Continuous Drain Current (Note 6) V = 10V I GS D State 0.6 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 0.4 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 4 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.29 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 433 C/W JA Total Power Dissipation (Note 6) 0.35 W PD Steady State Thermal Resistance, Junction to Ambient (Note 6) 360 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A I V = 30V, V = 0V DSS DS GS Gate-Source Leakage 10 A I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.8 1.2 1.6 V V V = V , I = 250A GS(TH) DS GS D 0.2 0.4 V = 10V, I = 0.59A GS D Static Drain-Source On-Resistance R DS(ON) 0.3 0.7 V = 4.5V, I = 0.2A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 10mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 50 pF iss V = 15V, V = 0V, DS GS Output Capacitance C 12 pF oss f = 1.0MHz Reverse Transfer Capacitance C 10 pF rss Gate Resistance 58 R V = V = 0V, f = 1.0MHz g DS GS 0.5 nC Total Gate Charge (V = 4.5V) Q GS g 1.2 nC Total Gate Charge (V = 10V) Q V = 10V, V = 10V GS g DS GS Gate-Source Charge 0.2 nC = 250mA Q ID gs Gate-Drain Charge 0.1 nC Q gd Turn-On Delay Time t 3.5 ns D(ON) Turn-On Rise Time t 3.3 ns R V = 10V, V = 30V, GS DS Turn-Off Delay Time t 16.8 ns I = 100mA, R = 25 D(OFF) D G Turn-Off Fall Time t 13.8 ns F Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 April 2021 DMN3401LDW Diodes Incorporated www.diodes.com Document number: DS41496 Rev. 5 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
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ZTX
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