DMN4020LFDE 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm profile ideal for low profile applications 2 PCB footprint of 4mm I max D V R max (BR)DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low On-Resistance 20m V = 10V 8.0A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antimony Free. Green Device (Note 3) 28m V = 4.5V 6.7A GS Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: U-DFN2020-6 Type E state resistance (R ) and yet maintain superior switching DS(on) Case Material: Molded Plastic, Green Molding Compound. performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper leadframe. Solderable General Purpose Interfacing Switch per MIL-STD-202, Method 208 Power Management Functions Weight: 0.0065 grams (approximate) D U-DFN2020-6 Type E G S Equivalent Circuit Bottom View Pin Out Ordering Information (Note 4) Part Number Marking Reel size (inches) Quantity per reel DMN4020LFDE-7 NE 7 3,000 DMN4020LFDE-7 NE 13 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN4020LFDE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A 8.0 A I D State 6.3 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 9.5 A t<10s I A D 7.5 T = +70C A Steady T = +25C 6.7 A I A D State 5.3 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 8.0 A t<10s I A D 6.4 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 32 A DM Maximum Body Diode Continuous Current I 2.5 A S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 0.66 A Total Power Dissipation (Note 5) P W D 0.42 T = +70C A Steady state 189 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 132 2.03 T = +25C A Total Power Dissipation (Note 6) P W D 1.31 T = +70C A Steady state 61 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 43 C/W Thermal Resistance, Junction to Case (Note 6) R 9.3 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 40 - - V V = 0V, I = 250 A DSS GS D - - 1 A Zero Gate Voltage Drain Current T = +25C I V = 40V, V = 0V J DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.4 - 2.4 V V V = V , I = 250 A GS(th) DS GS D 15 20 V = 10V, I = 8A GS D Static Drain-Source On-Resistance R - m DS (ON) 20 28 V = 4.5V, I = 4A GS D Diode Forward Voltage V - 0.7 1 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) - - Input Capacitance C 1060 pF iss V = 20V, V = 0V, DS GS - - Output Capacitance C 84 pF oss f = 1.0MHz - - Reverse Transfer Capacitance C 58 pF rss - - Gate Resistance R 1.6 V = 0V, V = 0V, f = 1MHz g DS GS - - Total Gate Charge (V = 4.5V) Q 8.8 nC GS g - 19.1 - nC Total Gate Charge (V = 10V) Q GS g V = 20V, I = 8A DS D Gate-Source Charge - 3.0 - nC Q gs Gate-Drain Charge - 2.5 - nC Q gd Turn-On Delay Time - - t 5.3 ns D(on) - - Turn-On Rise Time t 7.1 ns V = 20V, R = 2.5 r DS L - - Turn-Off Delay Time t 15.1 ns V = 10V, R = 3 D(off) GS G - - Turn-Off Fall Time t 4.8 ns f Reverse Recovery Time t - 10.5 - ns rr I = 8A, di/dt = 100A/s F Reverse Recovery Charge Q - 4.15 - nC rr Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect 8. Guaranteed by design. Not subject to production testing 2 of 6 September 2013 DMN4020LFDE Diodes Incorporated www.diodes.com Datasheet number: DS35819 Rev. 3 - 2 ADVANCE INFORMATION