A Product Line of Diodes Incorporated DMN4027SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance I D V R Max (BR)DSS DS(on) T = +25 C Fast switching speed A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 27m V = 10V 7.1A GS 40V Halogen and Antimony Free. Green Device (Note 3) 47m V = 4.5V 5.4A GS Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: SO-8 and yet maintain superior switching performance, making it ideal for Case Material: Molded Plastic, Green Molding Compound. UL high efficiency power management applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals Connections: See diagram below Terminals: Finish - Matte Tin annealed over Copper lead frame. Motor Control Solderable per MIL-STD-202, Method 208 e3 Backlighting Weight: 0.074 grams (approximate) DC-DC Converters Power Management Functions SO-8 S1 D1 G1 D1 S2 D2 D2 G2 Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Compliance Case Packaging DMN4027SSD-13 Standard SO-8 2500 / Tape & Reel DMN4027SSDQ-13 Automotive SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated DMN4027SSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage (Note 5) V 20 V GS (Notes 7) 7.1 Continuous Drain Current V = 10V T = +70C (Notes 7) I 5.7 A GS A D (Notes 6) 5.4 Pulsed Drain Current (Notes 8) 28.0 A V = 10V I GS DM Continuous Source Current (Body diode) (Notes 7) 3.3 A I S Pulsed Source Current (Body diode) (Notes 8) 28.0 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.25 (Notes 6 & 9) 10.0 W Power Dissipation 1.8 (Notes 6 & 10) P D Linear Derating Factor 14.3 mW/C 2.14 (Notes 7 & 9) 17.2 (Notes 6 & 9) 100 Thermal Resistance, Junction to Ambient (Notes 6 & 10) 70 R JA C/W (Notes 7 & 9) 58 Thermal Resistance, Junction to Lead (Notes 9 & 11) R 53 JL Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. AEC-Q101 V maximum is 16V. GS 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as note (3), except the device is measured at t 10 sec. 8. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 9. For a dual device with one active die. 10. For a device with two active die running at equal power. 11. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 April 2013 DMN4027SSD Diodes Incorporated www.diodes.com Document Number DS33040 Rev 2 - 2 ADVANCE INFORMATION