DMN4031SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max D Low On-Resistance V R Max (BR)DSS DS(ON) T = +25C (Note 5) A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 31m V = 10V 7.0A GS 40V Halogen and Antimony Free. Green Device (Note 3) 50m V = 4.5V 5.6A GS Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMN4031SSDQ) Description and Applications Mechanical Data Case: SO-8 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic,Gree Molding Compound. (R ), yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Motor Control Terminals: Finish Matte Tin Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.072 grams (Approximate) DC-DC Converters SO-8 S1 D1 D1 D2 D1 G1 D2 S2 G1 G2 G2 D2 S1 S2 Top View N-Channel MOSFET N-Channel MOSFET Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN4031SSD-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN4031SSD Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage 40 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 5.2 A Continuous Drain Current (Note 5) (V = 10V) I A GS D State 4.1 T = +70C A Steady T = +25C 4.3 A A Continuous Drain Current (Note 5) (V = 4.5V) I GS D State 3.4 T = +70C A Steady T = +25C 7.0 A Continuous Drain Current (Note 6) (V = 10V) I A GS D State 5.6 T = +70C A T = +25C Steady A 5.8 A Continuous Drain Current (Note 6) (V = 4.5V) I GS D State 4.7 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 40 A I DM Maximum Continuous Body Diode Forward Current (Note 6) 2.2 A I S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 40 A SM Avalanche Current, L = 0.1mH (Note 7) I 11 A AS Avalanche Energy, L = 0.1mH (Note 7) E 18 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 1.42 W P D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 88 C/W A JA Total Power Dissipation (Note 6) P 2.6 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 48 C/W A JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 10mA DSS GS D Zero Gate Voltage Drain Current 1 A IDSS VDS = 40V, VGS = 0V Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1.6 2.4 3.0 V V V = V , I = 250A GS(TH) DS GS D On-state drain current 20 A I V = 10V, V = 5A D(ON) GS DS 19 31 V = 10V, I = 6A GS D Static Drain-Source On-Resistance R m DS(ON) 44 50 V = 4.5V, I = 5A GS D Forward Transfer Admittance Y 11 S V = 5V, I = 6A FS DS D Diode Forward Voltage V 0.74 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 945 pF ISS V = 20V, V = 0V, DS GS Output Capacitance C 69 pF OSS f = 1.0MHz Reverse Transfer Capacitance C 58 pF RSS Gate resistance 1.45 RG VDS = 0V, VGS = 0V, f = 1.0MHz 8.4 nC Total Gate Charge (V = 4.5V) Q GS G VGS = 10V, VDS = 20V, 18.6 nC Total Gate Charge (V = 10V) Q GS G I = 12A D Gate-Source Charge 3.3 nC Q GS Gate-Drain Charge 2.2 nC Q GD Turn-On Delay Time T 6.4 ns D(ON) Turn-On Rise Time T 9.7 ns V = 10V, V = 20V, R GS DS Turn-Off Delay Time T 19.8 ns R = 1.6, R = 3 D(OFF) L G Turn-Off Fall Time T 3.1 ns F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. The value in any given application depends on users specific board design 6. Device mounted on 1 x 1 FR-4PCB with high coverage 1 oz. copper, single sided. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMN4031SSD August 2016 Diodes Incorporated www.diodes.com Document number: DS35410 Rev. 5 - 2 ADVANCE INFORMATION