A Product Line of Diodes Incorporated DMN4036LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance I D V R Fast switching speed (BR)DSS DS(on) T = 25C A Green component and RoHS compliant (Note 1) 36m V = 10V 12.2A GS Qualified to AEC-Q101 Standards for High Reliability 40V 61m V = 4.5V 9.4A GS Mechanical Data Case: TO252-3L Description and Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) This MOSFET has been designed to minimize the on-state resistance Moisture Sensitivity: Level 1 per J-STD-020 (R ) and yet maintain superior switching performance, making it DS(on) ideal for high efficiency power management applications. Terminals Connections: See Diagram Terminals: Matte Tin Finish annealed over Copper leadframe. Backlighting Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.33 grams (approximate) Power management functions D D TO252-3L G D S GS Equivalent Circuit TOP VIEW PIN OUT -TOP VIEW Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4036LK3-13 N4036L 13 16 2,500 Note: 1. Diodes, Inc. defines Green products as those which are RoHS compliant and contain no halogens or antimony compounds further information about Diodes Inc.s Green Policy can be found on our website. For packaging details, go to our website. Marking Information = Manufacturers Marking N4036L = Product Type Marking Code YYWW YYWW = Date Code Marking YY = Year (ex: 09 = 2009) N4036L WW = Week (01 - 53) 1 of 8 March 2010 DMN4036LK3 Diodes Incorporated www.diodes.com Document number: DS32122 Rev. 2 - 2 A Product Line of Diodes Incorporated DMN4036LK3 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source voltage V 40 V DSS Gate-Source voltage (Note 2) V 20 V GS (Note 4) 12.2 Continuous Drain current V = 10V T = 70C (Note 4) I 9.7 A GS A D (Note 3) 8.5 Pulsed Drain current V = 10V (Note 5) I 31.7 A GS DM Continuous Source current (Body diode) (Note 4) I 10.4 A S Pulsed Source current (Body diode) (Note 5) I 31.7 A SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 4.12 (Note 3) 33 W Power dissipation 8.49 (Note 4) P D Linear derating factor 67.9 mW/C 2.12 (Note 6) 16.9 (Note 3) 30.3 Thermal Resistance, Junction to Ambient (Note 4) 14.7 R JA C/W (Note 6) 59.0 Thermal Resistance, Junction to Lead (Note 7) R 3.1 JL Operating and storage temperature range -55 to 150 C T , T J STG Notes: 2. AEC-Q101 V maximum is 16V. GS 3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. 4. Same as note 3, except the device is measured at t 10 sec. 5. Same as note 3, except the device is pulsed with D = 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 March 2010 DMN4036LK3 Diodes Incorporated www.diodes.com Document number: DS32122 Rev. 2 - 2