DMN4800LSSQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I max D Low Input Capacitance BV R max DSS DS(ON) T = +25C A Fast Switching Speed 8.6A 14m VGS = 10V Low Input/Output Leakage 30V 7.1A 20m V = 4.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description PPAP Capable (Note 4) This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high-efficiency power management applications. Mechanical Data Case: SO-8 Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals Connections: See Diagram DC-DC Converters Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072g (Approximate) D SO-8 S D S D G S D G D S Top View Equivalent Circuit Top View Internal Schematic Ordering Information (Note 5) Part Number Case Packaging DMN4800LSSQ-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN4800LSSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 30 V VDSS Gate-Source Voltage 25 V V GSS Steady T = +25C 8.6 A A I D 6.3 State T = +70C A Continuous Drain Current (Note 7) V = 10V GS T = +25C A 11.8 t<10s I A D 9.0 T = +70C A Maximum Body Diode Forward Current (Note 7) 2.4 A I S Pulsed Drain Current (Note 8) 50 A I DM Thermal Characteristics Characteristic Symbol Value Units T = +25C 1.46 A Total Power Dissipation (Note 6) W P D T = +70C 0.9 A Steady state 86 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 46 1.7 TA = +25C Total Power Dissipation (Note 7) P W D 1.0 T = +70C A Steady state 75 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 40 C/W Thermal Resistance, Junction to Case (Note 7) 15 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 30V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 0.8 1.2 1.6 V V V = V , I = 250A GS(th) DS GS D 11 14 V = 10V, I = 9A GS D Static Drain-Source On-Resistance R m DS (ON) 14 20 V = 4.5V, I = 7A GS D Forward Transconductance g 8 S V = 10V, I = 9A fs DS D Diode Forward Voltage 0.72 0.94 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 798 pF C iss V = 10V, V = 0V DS GS Output Capacitance 128 pF C oss f = 1.0MHz Reverse Transfer Capacitance 122 pF C rss Gate Resistance 1.37 R V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge Q 8.7 g Gate-Source Charge Q 1.7 nC V = 5V, V = 15V, I = 9A gs GS DS D Gate-Drain Charge Q 2.4 gd Turn-On Delay Time t 5.03 d(on) Rise Time t 4.50 r V = 15V, V = 10V, DD GEN ns Turn-Off Delay Time 26.33 R = 15R = 6.0I = 1A td(off) L G D Fall Time 8.55 t f Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 8. Repetitive rating, pulse width limited by junction temperature. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 6 DMN4800LSSQ March 2016 Diodes Incorporated www.diodes.com Document number: DS37496 Rev. 1 - 2 NEW PRODUCT