DMN6017SK3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I Max D BV R Max DSS DS(ON) Low Input Capacitance T = +25C C Lead-Free Finish RoHS Compliant (Notes 1 & 2) 18m V = 10V 43A GS 60V Halogen and Antimony Free. Green Device (Note 3) 20m V = 4.5V 41A GS Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This new generation MOSFET is designed to minimize the on-state Case: TO252 (DPAK) resistance (R ) and yet maintain superior switching performance, Case Material: Molded Plastic, Green Molding Compound. DS(ON) making it ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram DC-DC Converters Weight: 0.33 grams (Approximate) Industrial Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMN6017SK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN6017SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 43 C I A D 34 T = +70C C Continuous Drain Current, V = 10V (Note 5) GS T = +25C 11 A A I D 8.8 T = +70C A Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) I 70 A DM Maximum Continuous Body Diode Forward Current (Note 5) I 3.6 A S Avalanche Current, L = 0.1mH I 25 A AS Avalanche Energy, L = 0.1mH E 32 mJ AS Thermal Characteristics Characteristic Symbol Value Unit 3.3 T = +25C A Total Power Dissipation (Note 5) P W D 50 T = +25C C Thermal Resistance, Junction to Ambient (Note 5) R 38 JA C/W Thermal Resistance, Junction to Case (Note 5) 2.5 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 60 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current - - 1 A I V = 48V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 1 - 3 V V V = V , I = 250A GS(TH) DS GS D - - 18 V = 10V, I = 6A GS D Static Drain-Source On-Resistance R m DS(ON) - - 20 V = 4.5V, I = 4A GS D Diode Forward Voltage V - - 1 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C - 2711 - pF iss V = 15V, V = 0V, DS GS 152 Output Capacitance C - - pF oss f = 1MHz 126 Reverse Transfer Capacitance C - - pF rss 1.4 Gate Resistance R - - V = 0V, V = 0V, f = 1MHz g DS GS 26 - - nC Total Gate Charge (V = 4.5V) Q GS g - 55 - nC Total Gate Charge (V = 10V) Q GS g V = 48V, I = 6A DS D Gate-Source Charge - 6.2 - nC Q gs Gate-Drain Charge - 8.5 - nC Q gd Turn-On Delay Time - 4.9 - ns t D(ON) 5.4 Turn-On Rise Time t - - ns V = 30V, V = 10V, R DD GS 38.2 Turn-Off Delay Time t - - ns R = 3.3, , I = 6A D(OFF) g D 11 Turn-Off Fall Time t - - ns F 16.6 Reverse Recovery Time t - - ns RR I = 6A, di/dt = 100A/s F 10.3 Reverse Recovery Charge Q - - nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 7 DMN6017SK3 June 2017 Diodes Incorporated www.diodes.com Document number: DS37725 Rev. 2 - 2 ADVANCED INFORMATION