DMN6040SSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = 25C A Fast Switching Speed 40m V = 10V 5.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) GS Halogen and Antimony Free. Green Device (Note 3) 60V Qualified to AEC-Q101 standards for High Reliability 55m V = 4.5V 4.7A GS Mechanical Data Description and Applications Case: SO-8 This MOSFET has been designed to minimize the on-state resistance Case Material: Molded Plastic,Gree Molding Compound. (R ) and yet maintain superior switching performance, making it DS(on) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Backlighting Terminals: Finish Matte Tin annealed over Copper leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.008 grams (approximate) SO-8 S D S D S D G D Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN6040SSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN6040SSS Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = 25C Steady A 5.5 A I D State 4.4 T = 70C A Continuous Drain Current (Note 6) V = 10V GS T = 25C 7.0 A t<10s I A D 5.5 T = 70C A Maximum Continuous Body Diode Forward Current (Note 6) I 2.5 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 30 A DM Avalanche Current (Note 7) L = 0.1mH I 14.2 A AR Repetitive Avalanche Energy (Note 7) L = 0.1mH 10 mJ E AR Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Units 1.5 T = 25C A Total Power Dissipation (Note 5) P W D T = 70C 1 A Steady State 80 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 48 T = 25C 2.0 A Total Power Dissipation (Note 6) W P D T = 70C 1.3 A Steady State 61 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 37 C/W Thermal Resistance, Junction to Case 6.4 R JC Operating and Storage Temperature Range -55 to 150 C T T J, STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 100 nA V = 60V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(th) DS GS D 30 40 V = 10V, I = 4.5A GS D Static Drain-Source On-Resistance R m DS (ON) 35 55 V = 4.5V, I = 3.5A GS D Forward Transfer Admittance 4.5 S Y V = 10V, I = 4.3A fs DS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 1287 C iss V = 25V, V = 0V DS GS Output Capacitance C 57 pF oss f = 1.0MHz Reverse Transfer Capacitance C 44 rss Gate Resistance R 1.2 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 10V) Q 22.4 GS g Total Gate Charge (V = 4.5V) Q 10.4 GS g nC V = 30V, I = 4.3A DS D Gate-Source Charge Q 4.9 gs Gate-Drain Charge Q 3.0 gd Turn-On Delay Time 6.6 t D(on) Turn-On Rise Time 8.1 t V = 10V, V = 30V, R = 6, r GS DD G nS Turn-Off Delay Time 20.1 I = 4.3A t D D(off) Turn-Off Fall Time t 4.0 f Body Diode Reverse Recovery Time t 18 nS I = 4.3A, dI/dt = 100A/s rr S Body Diode Reverse Recovery Charge Q 11.9 nC I = 4.3A, dI/dt = 100A/s rr S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = 25C AR AR J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 May 2012 DMN6040SSS Diodes Incorporated www.diodes.com Document number: DS35709 Rev. 3 - 2 NEW PRODUCT ADVANCE INFORMATION