DMN6075SQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET Summary Features and Benefits N MOSFET I Max D BV R Max DSS DS(ON) Low On-Resistance T = +25C A Low Input Capacitance 85m V = 10V 2.5A GS 60V Fast Switching Speed 120m V = 4.5V 2.0A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The DMN6075SQ is suitable for automotive applications Description and Applications requiring specific change control and is AEC-Q101 qualified, This MOSFET is designed to meet the stringent requirements of is PPAP capable, and is manufactured in IATF16949:2016 Automotive applications. It is qualified to AEC-Q101, supported by a certified facilities. PPAP and is ideal for use in: Mechanical Data DC-DC Converters Power Management Functions Case: SOT23 Backlighting Case Material: Molded P las t ic, Green Molding Com pound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) D SOT23 D G G S S Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number Case Packaging DMN6075SQ-7 SOT23 3000/Tape & Reel DMN6075SQ-13 SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN6075SQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 2.0 Steady A A Continuous Drain Current (Note 5) V = 10V I GS D State T = +70C 1.5 A 2.5 TA = +25C Steady Continuous Drain Current (Note 6) V = 10V I A GS D State 2.0 T = +70C A Maximum Body Diode Forward Current (Note 5) 2.0 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 12 A I DM Pulsed Source Current (10s Pulse, Duty Cycle = 1%) 12 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 0.8 A Total Power Dissipation (Note 5) W P D T = +70C 0.5 A Thermal Resistance, Junction to Ambient (Note 5) Steady State 157 C/W R JA T = +25C 1.15 A Total Power Dissipation (Note 6) W P D T = +70C 0.7 A Thermal Resistance, Junction to Ambient (Note 6) Steady State 110 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 69 85 V = 10V, I = 3.2A GS D Static Drain-Source On-Resistance m R DS(ON) 75 120 V = 4.5V, I = 2.8A GS D Diode Forward Voltage V 0.8 1.2 V V = 0V, I = 2.5A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 606 pF C iss V = 20V, V = 0V, DS GS Output Capacitance 32.6 pF C oss f = 1.0MHz Reverse Transfer Capacitance 24.6 pF C rss Gate Resistance 1.5 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 10V) Q 12.3 nC GS g Total Gate Charge (V = 4.5V) Q 5.6 nC GS g V = 30V, I = 3A DS D Gate-Source Charge Q 1.7 nC gs Gate-Drain Charge Q 1.9 nC gd Turn-On Delay Time t 3.5 ns D(ON) Turn-On Rise Time t 4.1 ns R V = 10V, V = 30V, GS DS Turn-Off Delay Time t 35 ns R = 20, R = 50 D(OFF) g L Turn-Off Fall Time 11 ns t F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN6075SQ July 2019 Diodes Incorporated www.diodes.com Document number: DS41898 Rev. 2 - 2 ADVANCE INFORMATION