X-On Electronics has gained recognition as a prominent supplier of DMN65D8L-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN65D8L-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN65D8L-7 Diodes Incorporated

Name: DMN65D8L-7
Brand: Diodes Incorporated
SKU: DMN65D8L7_Diodes_Incorporated
Availability: OutOfStock
Rating: 5 (11 reviews)

DMN65D8L-7 electronic component of Diodes Incorporated

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See Product Specifications

Part No.	DMN65D8L-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET N-Ch Enh Mode FET 60V 3ohm 310mA
Datasheet:	DMN65D8L-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.1304 ea
Line Total: USD 0.13

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

DMN65D8L-7 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
17460 Ship by Tue. 13 May to Mon. 19 May MOQ : 10526 Multiples : 3000	10526 : USD 0.0255 13889 : USD 0.0193 14388 : USD 0.0186 18000 : USD 0.0185

32010 Ship by Tue. 13 May to Mon. 19 May MOQ : 12500 Multiples : 3000	12500 : USD 0.0208 45000 : USD 0.0195 75000 : USD 0.0193 150000 : USD 0.0186

3007 Ship by Tue. 20 May to Fri. 23 May MOQ : 20 Multiples : 20	20 : USD 0.0456 200 : USD 0.0372 600 : USD 0.0324 3000 : USD 0.02 9000 : USD 0.0183 21000 : USD 0.0174

2910 Ship by Fri. 09 May to Tue. 13 May MOQ : 1 Multiples : 1	1 : USD 0.154 10 : USD 0.105 50 : USD 0.0714 100 : USD 0.0602 549 : USD 0.0336

We are delighted to provide the DMN65D8L-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN65D8L-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The DMN65D8L-7 is a MOSFET N-Channel Enhancement Mode Field Effect Transistor (FET) manufactured by Diodes Incorporated. It has a breakdown voltage of 60V and a low on-resistance of 3Ohms. It also has a maximum drain current rating of 310mA. It is ideal for applications in which switching speed and low on-resistance is important. It can be used in power switching and signal switching applications such as DC motor drives and DC to DC converters.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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Manufacturer Diodes Incorporated Diodes Incorporated
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 310 mA 310 mA
Vds - Drain-Source Breakdown Voltage 60 V 60 V
Rds On - Drain-Source Resistance 3 Ohms 3 Ohms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 1.2 V 1.2 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 540 mW 540 mW
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 23 - 3 SOT - 23 - 3
Packaging Cut Tape Cut Tape
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 10 V 10 V
Qg - Gate Charge 0.87 nC 0.87 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Series Dmn63 Dmn63
Transistor Type 1 N - Channel 1 N - Channel
Brand Diodes Incorporated Diodes Incorporated
Forward Transconductance - Min 80 Ms 80 Ms
Cnhts 8541210000 8541210000
Fall Time 7.3 ns 7.3 ns
Hts Code 8541210095 8541210095
Mxhts 85412101 85412101
Product Type Mosfet Mosfet
Rise Time 2.8 ns 2.8 ns
Factory Pack Quantity : 3000 3000
Subcategory Mosfets Mosfets
Taric 8541210000 8541210000
Typical Turn-Off Delay Time 12.6 ns 12.6 ns
Typical Turn-On Delay Time 2.7 ns 2.7 ns
Category MOSFET MOSFET
Brand Category Diodes Incorporated Diodes Incorporated