DMP1022UFDF 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I max 0.6mm profile ideal for low profile applications D V R max (BR)DSS DS(ON) 2 T = +25C A PCB footprint of 4mm -9.5A Low Gate Threshold Voltage 14.8m V = -4.5V GS Fast Switching Speed -8.5A 19m V = -2.5V GS -12V ESD Protected Gate -7.2A 26m V = -1.8V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 32m V = -1.5V -6.6A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data Case: U-DFN2020-6 This MOSFET is designed specifically for use in battery management Case Material: Molded Plastic, Green Molding Compound. applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. e4 Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (Approximate) D U-DFN2020-6 G ESD PROTECTED Gate Protection S Diode Pin Out Top View Internal Schematic Bottom View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMP1022UFDF-7 U-DFN2020-6 3,000/Tape & Reel DMP1022UFDF-13 U-DFN2020-6 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP1022UFDF Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -12 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C -9.5 A I A D State -7.6 T = +70C A Continuous Drain Current (Note 6) V = -4.5V GS T = +25C -11.0 A t<5s A I D -8.8 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -90 A DM T = +25C -2.5 A Continuous Source-Drain Diode Current I A S -7.1 T = +25C C Pulsed Source-Drain Diode Current (10s pulse, duty cycle = 1%) -50 A I SM Thermal Characteristics Characteristic Symbol Value Units T = +25C 0.73 A Total Power Dissipation (Note 5) W P D 0.47 T = +70C A Steady state 172 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<5s 128 2.1 TA = +25C Total Power Dissipation (Note 6) P W D 1.3 T = +70C A Steady state 59 Thermal Resistance, Junction to Ambient (Note 6) R JA t<5s 45 C/W Thermal Resistance, Junction to Case (Note 6) Steady state 5.1 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -12 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -200 nA V = -12V, V = 0V J DSS DS GS Zero Gate Voltage Drain Current T = +55C (Note 8) I -2 A V = -12V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.35 -0.8 V V = V , I = -250A GS(th) DS GS D 12 14.8 V = -4.5V, I = -4A GS D 15 19 V = -2.5V, I = -4A GS D Static Drain-Source On-Resistance R m DS(ON) 20 26 V = -1.8V, I = -4A GS D 23 32 V = -1.5V, I = -2A GS D Diode Forward Voltage -0.8 -1.2 V V V = 0V, I = -8A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 2,712 Input Capacitance C iss V = -10V, V = 0V, DS GS 514 Output Capacitance C pF oss f = 1.0MHz 467 Reverse Transfer Capacitance C rss 8.6 18 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 48.3 Total Gate Charge Q V = -8V, V = -6V, I = -10A g GS DS D 28.6 Total Gate Charge Q g nC V = -4.5V, V = -6V, GS DS Gate-Source Charge 4.2 Q gs I = -10A D Gate-Drain Charge 7.0 Q gd Turn-On Delay Time 25.1 t D(on) Turn-On Rise Time 39.8 t V = -6V, V = -4.5V, r DS GS ns Turn-Off Delay Time 141 t R = 1, I = -8A D(off) G D 147 Turn-Off Fall Time t f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 October 2015 DMP1022UFDF www.diodes.com Diodes Incorporated Datasheet number: DS36624 Rev. 5 - 2 NEW PRODUCT