DMP1046UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D MAX Device V R (BR)DSS DS(ON) max T = +25C Low Input Capacitance A -3.8A Low Profile, 0.6mm Max Height 61m V = -4.5V GS P-Channel -12V 81m V = -2.5V -3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) GS -2.8A 115m V = -1.8V Halogen and Antimony Free. Green Device (Note 3) GS Mechanical Data Description Case: U-DFN2020-6 This MOSFET is designed to minimize the on-state resistance (R ) DS(on) Case Material: Molded Plastic, Green Molding Compound. and yet maintain superior switching performance, making it ideal for UL Flammability Classification Rating 94V-0 high-efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Applications e4 Solderable per MIL-STD-202, Method 208 Load Switch Terminals Connections: See Diagram Below Power Management Functions Weight: 0.0065 grams (Approximate) Portable Power Adaptors U-DFN2020-6 D2 D 1 S2 G2 D2 D1 G2 G1 D1 D2 G1 S1 S2 S1 Pin1 Internal Schematic Bottom View Ordering Information (Note 4) Part Number Case Packaging DMP1046UFDB -7 U-DFN2020-6 3,000/Tape & Reel DMP1046UFDB -13 U-DFN2020-6 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP1046UFDB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -12 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C -3.8 A I A D State -3.0 TA = +70C Continuous Drain Current (Note 5) V = 4.5V GS T = +25C -5.0 A t < 5s A I D -4.0 T = +70C A -1 Maximum Continuous Body Diode Forward Current (Note 5) I A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -15 A DM Avalanche Current (L = 0.1mH) I -12 A AS Avalanche Energy (L = 0.1mH) E 8 mJ AS Thermal Characteristics Characteristic Symbol Value Units Steady State 1.4 Total Power Dissipation (Note 5) P W D t < 5s 2.2 Steady State 92 Thermal Resistance, Junction to Ambient (Note 5) R JA t < 5s 55 C/W Thermal Resistance, Junction to Case (Note 5) 20 R JC Operating and Storage Temperature Range T T -55 to 150 C J, STG Notes: 5. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV -12 - - V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C - - -1.0 A J IDSS VDS = -12V, VGS = 0V Gate-Source Leakage - - 100 nA I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage -0.4 - -1 V V V = V , I = -250A GS(th) DS GS D - 37 61 V = -4.5V, I = -3.6A GS D Static Drain-Source On-Resistance - 47 81 m R V = -2.5V, I = -3.2A DS (ON) GS D - 63 115 V = -1.8V, I = -1.0A GS D Diode Forward Voltage V - -0.65 -1.2 V V = 0V, I = -4.5A SD GS S DYNAMIC CHARACTERISTICS (Note 7) - 915 - Input Capacitance C pF iss V = -6V, V = 0V, DS GS - 225 - Output Capacitance C pF oss f = 1.0MHz - 183 - Reverse Transfer Capacitance C pF rss - 56.9 - Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS - 10.7 - nC Total Gate Charge (V = -4.5V) GS Q g 17.9 nC Total Gate Charge (V = -8V) GS V = -6V, I = -4.3A DS D Gate-Source Charge - 1.7 - nC Q gs Gate-Drain Charge - 3.0 - nC Q gd Turn-On Delay Time - 5.7 - ns t D(on) 11.5 Turn-On Rise Time t - - ns V = -6V, V = -4.5V, r DD GS 27.8 Turn-Off Delay Time t - - ns R = 1.6, R = 1 D(off) L G 26.4 Turn-Off Fall Time t - - ns f Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 February 2015 DMP1046UFDB Diodes Incorporated www.diodes.com Document number: DS37712 Rev. 2 - 2 ADVANCED INFORMATION