DMP10H400SE 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Drive I D BVDSS RDS(ON) Max T = +25C Low Input Capacitance A Fast Switching Speed 250m V = -10V -2.3A GS -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -2.1A 300m V = -4.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description An Automotive-Compliant Part is Available Under Separate Datasheet (DMP10H400SEQ) This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: SOT223 Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Motor Control Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals Connections: See Diagram Below Power Management Functions Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Uninterrupted Power Supply e3 Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) D SOT223 G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP10H400SE-13 SOT223 2,500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP10H400SE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -100 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C -6.0 C Continuous Drain Current, V = -10V (Note 5) I A GS D State -2.3 T = +25C A Maximum Body Diode Forward Current (Note 5) I -1.9 A S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) -10 A IDM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 2.0 A Total Power Dissipation (Note 5) W PD T = +70C 1.3 A Thermal Resistance, Junction to Ambient (Note 5) R 62 C/W JA 13.7 Total Power Dissipation (Note 5) T = +25C P W C D C/W Thermal Resistance, Junction to Case (Note 5) R 9.1 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage -100 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = -80V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage -1.0 -2.2 -3.0 V V V = V , I = -250A GS(TH) DS GS D 203 250 V = -10V, I = -5A GS D Static Drain-Source On-Resistance m R DS(ON) 241 300 V = -4.5V, I =-5A GS D Diode Forward Voltage V -0.9 -1.2 V V = 0V, I = -5A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 1239 iss 42 Output Capacitance C pF V = -25V, V = 0V, f = 1.0MHz oss DS GS 28 Reverse Transfer Capacitance C rss 13 Gate Resistance Rg VDS = 0V, VGS = 0V, f = 1.0MHz 8.4 Total Gate Charge (V = -4.5V) Q GS g 17.5 Total Gate Charge (V = -10V) Q GS g nC V = -60V, I = -5A DS D Gate-Source Charge 2.8 Q gs Gate-Drain Charge 3.2 Q gd 9.1 Turn-On Delay Time t D(ON) 14.9 Turn-On Rise Time t R ns V = -50V, R = 9.1, I = -5A DD G D 57.4 Turn-Off Delay Time t D(OFF) 34.4 Turn-Off Fall Time t F 25.2 Body Diode Reverse Recovery Time ns tRR VGS = 0V, IS = -5A, di/dt = 100A/s 24.5 Body Diode Reverse Recovery Charge nC Q V = 0V, I = -5A, di/dt = 100A/s RR GS S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2 of 7 DMP10H400SE November 2015 Diodes Incorporated www.diodes.com Document Number DS37841 Rev. 3 - 2 ADVANCE INFORMATION NEW PRODUCT