DMP2008UFG
20V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features
Low R ensures on state losses are minimized
I max DS(ON)
D
V R max
(BR)DSS DS(ON)
T = +25C Small form factor thermally efficient package enables higher
A
density end products
8m @ V = -4.5V -14A
GS
Occupies just 33% of the board area occupied by SO-8 enabling
9.8m @ V = -2.5V -10A
GS
-20V
smaller end product
-9.3A
13m @ V = -1.8V
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
-8.3A
17m @ V = -1.5V
GS
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R ) and yet maintain superior switching performance, making it
DS(on)
Case: POWERDI3333-8
ideal for high efficiency power management applications.
Case Material: Molded Plastic,Gree Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Load Switch
Terminals: Finish Matte Tin annealed over Copper leadframe.
Power Management Functions
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Drain
POWERDI3333-8
Pin 1
S
S
S
G
Gate
D
D
D
Source
D
Top View Bottom View Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMP2008UFG-7 POWERDI3333-8 2000/Tape & Reel
DMP2008UFG-13 POWERDI3333-8 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMP2008UFG
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage -20 V
V
DSS
Gate-Source Voltage (Note 5) 8 V
V
GSS
T = +25C
A -14
Steady
Continuous Drain Current (Note 6) V = -4.5V T = +70C I -11 A
GS A D
State
-54
T = +25C
C
Pulsed Drain Current (10s pulse, duty cycle = 1%) -80 A
I
DM
Maximum Continuous Body Diode Forward Current (Note 6) -2.2 A
I
S
Avalanche Current (Note 8) I -15 A
AS
Avalanche Energy (Note 8) E -113 mJ
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
2.4
T = +25C
A
Total Power Dissipation (Note 6) P W
D
41
T = +25C
C
(Note 5) 52
Thermal Resistance, Junction to Ambient R
JA
(Note 6) 137 C/W
Thermal Resistance, Junction to Case (Note 6) 3.0
R
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage -20 V
BV V = 0V, I = -250A
DSS GS D
Zero Gate Voltage Drain Current -1 A
I V = -16V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 8V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage V -0.4 -1.0 V V = V , I = -250A
GS(th) DS GS D
8 V = -4.5V, I = -12A
GS D
9.8 V = -2.5V, I = -10A
GS D
Static Drain-Source On-Resistance m
R
DS (ON)
13 V = -1.8V, I = -9.3A
GS D
17 V = -1.5V, I = -8.3A
GS D
Forward Transfer Admittance 42 S
|Y | V = -5V, I = -12A
fs DS D
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance 6909
C
iss
V = -10V, V = 0V
DS GS
Output Capacitance 635 pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance 563
C
rss
Gate Resistance 2.5
R V = 0V, V = 0V, f = 1.0MHz
G DS GS
72
Total Gate Charge (V = -4.5V) Q
GS g
40
Total Gate Charge (V = -2.5V) Q
GS g
nC
V = -10V, I = -12A
DD D
8.6
Gate-Source Charge Q
gs
14.5
Gate-Drain Charge Q
gd
22
Turn-On Delay Time t
D(on)
33
Turn-On Rise Time
tr V = -4.5V, V = -10V,
GS DD
ns
291
Turn-Off Delay Time R = 6, I = -12A
t G D
D(off)
Turn-Off Fall Time 124
t
f
BODY DIODE CHARACTERISTICS
-0.7 V
V = 0V, I = -12A
GS S
Diode Forward Voltage V
SD
-0.7 V
V = 0V, I = -2A
GS S
Reverse Recovery Time (Note 10) 25 ns
t I = -12A, di/dt = 100A/s
rr F
Reverse Recovery Charge (Note 10) 15 nC
Q I = -12A, di/dt = 100A/s
rr F
Notes: 5. AEC-Q101 V maximum is 6.4V.
GS
6. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R is guaranteed by design
JA JC
while R is determined by the users board design.
JA
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8 .UIS in production with L = 1mH, T = +25C.
J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
2 of 6
August 2014
DMP2008UFG
Diodes Incorporated
www.diodes.com
Document number: DS35694 Rev. 14 - 2
ADVANCE INFORMATION
ADVANCE INFORMATION