X-On Electronics has gained recognition as a prominent supplier of DMP2066LSN-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP2066LSN-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP2066LSN-7 Diodes Incorporated

DMP2066LSN-7 electronic component of Diodes Incorporated
DMP2066LSN-7 Diodes Incorporated
DMP2066LSN-7 MOSFETs
DMP2066LSN-7  Semiconductors

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See Product Specifications
Part No. DMP2066LSN-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET P-channel 1.25W
Datasheet: DMP2066LSN-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6762 ea
Line Total: USD 0.68 
Availability - 14517
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14517
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 0.6762
10 : USD 0.4588
100 : USD 0.2898
500 : USD 0.2178
1000 : USD 0.1914
3000 : USD 0.1507
6000 : USD 0.1474
9000 : USD 0.1441

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMP2066LSN-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP2066LSN-7 and other electronic components in the MOSFETs category and beyond.

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DMP2066LSN P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low R : Case: SC-59 DS(ON) Case Material Molded Plastic. UL Flammability Rating 94V-0 40 m V = -4.5V GS Moisture Sensitivity: Level 1 per J-STD-020D 70 m V = -2.5V GS Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Low Input/Output Leakage Method 208 Lead Free By Design/RoHS Compliant (Note 3) Terminal Connections: See Diagram Qualified to AEC-Q101 Standards for High Reliability Marking Information: See Page 4 Gree Device (Note 4) Ordering Information: See page 4 Weight: 0.014 grams (approximate) SC-59 Drain D Gate G S Source TOP VIEW Internal Schematic Pin Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 1) Continuous T = 25C A -4.6 A I D -3.7 T = 70C A Pulsed Drain Current (Note 2) -18 A I DM Body-Diode Continuous Current (Note 1) I 2.0 A S Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) P 1.25 W D Thermal Resistance, Junction to Ambient (Note 1) Steady-State 100 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. Device mounted on 1 x1 , FR-4 PC board with 2 oz. Copper and test pulse width t 10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc sGree policy can be found on our website at DMP2066LSN Electrical Characteristics T = 25C unless otherwise specified A Characteristic SymbolMin Typ Max Unit Test Condition STATIC PARAMETERS Drain-Source Breakdown Voltage BV -20 V I = -250A, V = 0V DSS D GS Zero Gate Voltage Drain Current T = 25C I -1 A V = -20V, V = 0V J DSS DS GS Gate-Body Leakage Current I 100 nA V = 0V, V = 12V GSS DS GS Gate Threshold Voltage V -0.6 -0.96 -1.2 V V = V , I = -250A GS(th) DS GS D On State Drain Current (Note 5) I -15 A V = -4.5V, V = -5V D (ON) GS DS V = -4.5V, I = -4.6A 29 40 GS D Static Drain-Source On-Resistance (Note 5) R m DS (ON) 55 70 V = -2.5V, I = -3.8A GS D Forward Transconductance (Note 5) 9 S g V = -10V, I = -4.5A FS DS D Diode Forward Voltage (Note 5) V -0.5 -0.72 -1.4 V I = -2.1A, V = 0V SD S GS Maximum Body-Diode Continuous Current (Note 1) 1.7 A I S DYNAMIC PARAMETERS (Note 6) Input Capacitance 820 pF C iss V = -15V, V = 0V DS GS Output Capacitance 200 pF C oss f = 1.0MHz Reverse Transfer Capacitance 160 pF C rss V = 0V, V = 0V DS GS Gate Resistance R 2.5 G f = 1.0MHz SWITCHING CHARACTERISTICS Total Gate Charge Q 10.1 G V = -10V, V = -4.5V, DS GS Gate-Source Charge Q 1.5 nC GS I = -4.5A D Gate-Drain Charge Q 4.3 GD Turn-On Delay Time t 4.4 d(on) Rise Time 9.9 t V = -10V, V = -4.5V, r DS GS ns Turn-Off Delay Time 28.0 I = -1A, R = 6.0 t D G d(off) Fall Time 23.4 t f Notes: 5. Test pulse width t = 300s. 6. Guaranteed by design. Not subject to production testing. 30 20 V = 10V V = 4.5V GS V = 5.0V GS DS 16 24 V = 3.0V GS 18 12 8 12 V = 2.5V GS 6 4 T = 150C V = 2.0V A T = 85C GS A T = 125C T = 25C A A V = 1.5V GS T = -55C A 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 3.5 4 V , DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic 2 of 5 August 2011 DMP2066LSN Diodes Incorporated www.diodes.com Document number: DS31467 Rev. 4 - 2 NEW PRODUCT I, DRAIN CURRENT (A) D I, DRAIN CURRENT (A) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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