DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I D P-Channel MOSFET V R (BR)DSS DS(ON) T = +25C A Low On-Resistance -200mA 5 V = -4.5V GS Very Low Gate Threshold Voltage V GS(TH) 7 V = -2.5V -170mA GS Low Input Capacitance -20V 10 V = -1.8V -140mA GS Fast Switching Speed 15 V = -1.5V -50mA GS Ultra-Small Surfaced Mount Package Ultra-Low Package Profile, 0.4mm Maximum Package Height Description ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation MOSFET is designed to minimize the on-state Halogen and Antimony Free. Green Device (Note 3) resistance (R ), yet maintain superior switching performance, DS(ON) Qualified to AEC-Q101 Standards for High Reliability making it ideal for high efficiency power management applications. Mechanical Data Applications Case: X2-DFN1006-3 DC-DC Converters Case Material: Molded Plastic, Green Molding Compound Power Management Functions UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish NiPdAu over Copper Leadframe. e4 Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (Approximate) X2-DFN1006-3 D G S D G Gate Protection S Diode ESD protected Top View Equivalent Circuit Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP210DUFB4-7 X2-DFN1006-3 3,000/Tape & Reel DMP210DUFB4-7B X2-DFN1006-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See N1 N1 N1 DMP210DUFB4 Marking Information From date code 1527 (YYWW), N1 N1 this changes to: Top View Top View Dot Denotes Drain Side Bar Denotes Gate and Source Side DMP210DUFB4-7 N1 Top View Bar Denotes Gate and Source Side N1 = Part Marking Code DMP210DUFB4-7B 2 of 7 DMP210DUFB4 August 2015 Diodes Incorporated www.diodes.com Document number: DS35026 Rev. 11 - 2 N1 N1 N1 N1 N1 N1