A Product Line of Diodes Incorporated DMP21D0UFD 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage I max D Fast Switching Speed V R Max T = 25 C (BR)DSS DS(on) A (Notes 4) ESD Protected Gate 3KV -1.14A Totally Lead-Free & Fully RoHS compliant (Note 1) 495m V = -4.5V GS Halogen and Antimony Free. Green Device (Note 2) 730m V = -2.5V -0.94A GS -20V Qualified to AEC-Q101 Standards for High Reliability 960m V = -1.8V -0.85A GS 1300m V = -1.5V -0.75A GS Mechanical Data Description and Applications Case: X1-DFN1212-3 Case Material: Molded Plastic, Green Molding Compound. This MOSFET has been designed to minimize the on-state resistance UL Flammability Classification Rating 94V-0 (R ) and yet maintain superior switching performance, making it DS(on) Moisture Sensitivity: Level 1 per J-STD-020 ideal for high efficiency power management applications. Terminals: Finish NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Portable electronics Weight: 0.005 grams (approximate) Drain X1-DFN1212-3 S Gate D Gate G Protection Source Diode Top View Bottom View ESD PROTECTED TO 3kV Equivalent Circuit Pin-out Top view Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DMP21D0UFD-7 K21 7 8 3000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For packaging details, go to our website at A Product Line of Diodes Incorporated DMP21D0UFD Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 8 V GSS T = 25C (Note 4) -1.14 A Steady Continuous Drain Current T = 85C (Note 4) I -0.83 A A D State T = 25C (Note 5) -0.82 A Pulsed Drain Current (Note 6) I -4.0 A DM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit (Note 4) 930 mW Power Dissipation P D (Note 5) 490 mW (Note 4) 135 C/W Thermal Resistance, Junction to Ambient R JA (Note 5) 256 C/W Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. 5. Same as note 4, except the device is mounted on minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 2 of 8 March 2012 DMP21D0UFD Diodes Incorporated www.diodes.com Datasheet Number: DS35364 Rev. 4 - 2