DMP21D2UFA 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package Height I max D V R max (BR)DSS DS(ON) 2 0.48mm Package Footprint, 16 Times Smaller than SOT23 T = +25C A 1.0 V = -4.5V Low On-Resistance GS 1.2 V = -2.5V GS Very Low Gate Threshold Voltage, 1.0V max -20V -330mA 1.6 V = -1.8V GS ESD Protected Gate 3.0 V = -1.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: X2-DFN0806-3 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 General Purpose Interfacing Switch Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish NiPdAu over Copper Leadframe Analog Switch Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) Drain Gate S D G Gate Protection Source Diode Top View ESD PROTECTED Package Pin Configuration Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number Case Packaging DMP21D2UFA-7B X2-DFN0806-3 10K/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP21D2UFA Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage 8 V V GSS Steady T = +25C -330 A Continuous Drain Current (Note 5) V = -4.5V I mA GS D State -260 T = +70C A Pulsed Drain Current (Note 6) I 1.5 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) Steady state 360 mW P D Steady state Thermal Resistance, Junction to Ambient (Note 5) 353 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 100 nA V = -16V, V = 0V C DSS DS GS Gate-Source Leakage 10 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.3 -1.0 V VGS(th) VDS = VGS, ID = -250A 0.5 1.0 V = -4.5V, I = -200mA GS D 0.6 1.2 V = -2.5V, I = -100mA GS D Static Drain-Source On-Resistance R DS (ON) 0.8 1.6 V = -1.8V, I = -50mA GS D 1.0 3.0 V = -1.5V, I = -10mA GS D Diode Forward Voltage V -1.0 V V = 0V, I = -10mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 49 pF iss V = -15V, V = 0V, DS GS Output Capacitance C 6.5 pF oss f = 1.0MHz Reverse Transfer Capacitance C 5.0 pF rss Total Gate Charge Q 0.8 nC g V = -4.5V, V =- 10V, GS DS Gate-Source Charge 0.1 nC Q gs I = -200mA D Gate-Drain Charge 0.2 nC Q gd Turn-On Delay Time 10.3 ns t D(on) Turn-On Rise Time 37.3 ns t r V = -15V, V = -4.5V, DD GS R = 2, I = -200mA Turn-Off Delay Time t 330 ns G D D(off) Turn-Off Fall Time t 163 ns f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMP21D2UFA September 2014 Diodes Incorporated www.diodes.com Document number: DS37121 Rev. 2 - 2 NEW PRODUCT NEW PRODUCT