DMP2240UW P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case: SOT-323 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 150 m V = -4.5V GS Moisture Sensitivity: Level 1 per J-STD-020 200 m V = -2.5V GS Terminals Connections: See Diagram Below 240 m V = -1.8V GS Terminals: Finish Matte Tin annealed over Alloy 42 Very Low Gate Threshold Voltage V 1V GS(th) leadframe. Solderable per MIL-STD-202, Method 208 Low Input Capacitance Marking Information: See Page 4 Fast Switching Speed Ordering Information: See Page 4 Low Input/Output Leakage Weight: 0.006 grams (approximate) Lead Free By Design/RoHS Compliant (Note 2) Gree Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Drain SOT-323 D Gate GS Source Top View Internal Schematic Top View Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS T = 25C -1.5 A Drain Current (Note 1) I A D T = 70C -1.0 A Pulsed Drain Current -5 A I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 1) P 250 mW D Thermal Resistance, Junction to Ambient R 500 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 1. Device mounted on FR-4 substrate PC board, 2oz. Copper, with minimum recommended pad layout. 2. No purposefully added lead. 3. Diodes Inc.s Green policy can be found on our website at DMP2240UW Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = 25C -1.0 J I A V = -20V, V = 0V DSS DS GS -5.0 T = 125C J Gate-Source Leakage I 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V -0.45 -1.0 V V = V , I = -250A GS(th) DS GS D V = -4.5V, I = -2.0A GS D 92 150 Static Drain-Source On-Resistance R 134 200 m V = -2.5V, I = -1.5A DS (ON) GS D 180 240 V = -1.8V, I = -0.5A GS D Forward Transconductance g 3.1 S V = -10V, I = -810mA FS DS D Diode Forward Voltage (Note 4) -0.9 V V V = 0V, I = -0.5A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance 320 pF C iss V = -16V, V = 0V DS GS Output Capacitance 80 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 60 pF rss Turn-On Delay Time t 12.5 ns D(on) Turn-On Rise Time t 10.3 ns V = -10V, V = -4.5V, r DS GS Turn-Off Delay Time t 46.5 ns R = 10 , R = 1.0 D(off) L G Turn-Off Fall Time t 22.2 ns f Notes: 4. Short duration pulse test used to minimize self-heating effect. V = -3.0V GS V = -10V V = -2.0V DS GS V = -1.8V GS V = -1.6V GS T = 125C A V = -1.4V GS T = 25C A V = -1.0V T = -55C GS A V = -1.2V GS 2 of 5 May 2010 DMP2240UW Diodes Incorporated www.diodes.com Document number: DS31372 Rev. 3 - 2