DMP26M7UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low R ensures on state losses are minimized I Max DS(ON) D V R Max (BR)DSS DS(ON) T = +25C Small form factor thermally efficient package enables higher C density end products 6.7m V = -4.5V -40A GS -20V Occupies just 33% of the board area occupied by SO-8 enabling -40A 9.0m VGS = -2.5V smaller end product ESD HBM Protected up to 1KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Mechanical Data ideal for high efficiency power management applications. Case: POWERDI3333-8 Case Material: Molded Plastic,Gree Molding Compound. Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Load Switch Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) POWERDI3333-8 D Pin 1 S S S G G D D D S D Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP26M7UFG-7 POWERDI3333-8 2000/Tape & Reel DMP26M7UFG-13 POWERDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP26M7UFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -20 V V DSS Gate-Source Voltage 10 V V GSS T = +25C A -18.0 Steady Continuous Drain Current (Note 5) V = -4.5V T = +70C I -14.5 A GS A D State -40 T = +25C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -80 A I DM Maximum Continuous Body Diode Forward Current (Note 5) -2.2 A I S Avalanche Current (Note 7) L=0.1mH I -23 A AS Avalanche Energy (Note 7) L=0.1mH E 28 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 2.3 A Total Power Dissipation (Note 5) W P D T = +25C 41 C (Note 5) 56 Thermal Resistance, Junction to Ambient R JA (Note 6) 124 C/W Thermal Resistance, Junction to Case R 6.8 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -16V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -0.4 -1.0 V V V = V , I = -250A GS(TH) DS GS D 4.2 6.7 V = -4.5V, I = -15A GS D Static Drain-Source On-Resistance 5.4 9.0 m R V = -2.5V, I = -10A DS(ON) GS D 7 V = -1.8V, I = -1A GS D Diode Forward Voltage V -0.7 -1.2 V SD V = 0V, I = -10A GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 5940 C iss V = -10V, V = 0V DS GS 835 Output Capacitance C pF oss f = 1.0MHz 728 Reverse Transfer Capacitance C rss 3.0 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 75 Total Gate Charge (V = -4.5V) Q GS g 156 Total Gate Charge (V = -10V) Q GS g nC V = -10V, I = -20A DD D Gate-Source Charge 8.8 Q gs Gate-Drain Charge 22 Q gd Turn-On Delay Time 10.7 t D(ON) Turn-On Rise Time 23 t V = -4.5V, V = -10V, R GS DD ns 121 Turn-Off Delay Time t R = 1, I = -10A D(OFF) G D 109 Turn-Off Fall Time t F 60 Reverse Recovery Time t ns I = -10A, di/dt = 100A/s RR F 47 Reverse Recovery Charge Q nC I = -10A, di/dt = 100A/s RR F Notes: 5. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R is guaranteed by design JA JC while R is determined by the users board design. JA 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7 .UIS in production with L =0.1mH, T = +25C J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated 2 of 6 DMP26M7UFG April 2015 Diodes Incorporated www.diodes.com Document number: DS37944 Rev. 1 - 2 ADVANCE INFORMATION ADVANCE INFORMATION NEW PRODUCT