NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SFV DMP3008SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits Low R Ensures On State Losses are Minimized DS(ON) I MAX D BV R MAX DSS DS(ON) Small Form Factor Thermally Efficient Package Enables Higher T = +25C A Density End Products 17m V = -10V -8.6A GS Occupies just 33% of the Board Area Occupied by SO-8 Enabling -30V Smaller End Product 25m V = -4.5V -7.1A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET is designed to minimize the on-state resistance Case: PowerDI 3333-8 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) Drain PowerDI3333-8 Pin 1 S S S G Gate D D D Source D Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP3008SFG-7 PowerDI3333-8 2000/Tape & Reel DMP3008SFG-13 PowerDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SFV DMP3008SFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -8.6 A I A D State -7.0 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -11.7 A t<10s A I D -9.3 T = +70C A Steady T = +25C -7.1 A I A D State -5.6 T = +70C A Continuous Drain Current (Note 6) V = -4.5V GS T = +25C -9.6 A t<10s A I D -7.6 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -80 A DM Maximum Continuous Body Diode Forward Current (Note 6) I -3.0 A S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.9 W D Steady State 140 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 72 C/W Total Power Dissipation (Note 6) P 2.2 W D Steady State 57 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 30 C/W Thermal Resistance, Junction to Case (Note 6) 7.1 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 100 100 P = 10 s R W DS(ON) 90 Single Pulse Limited R = 57 C/W JA 80 R = r * R JA(t) (t) JA T - T = P * R 10 ) J A JA(t) A 70 ( T N DC E 60 R R P = 10s W U 1 50 C P = 1s W N P = 100ms W I 40 A P = 10ms W R D P = 1ms W 30 , D P = 100s W I 0.1 - 20 T = 150C J(MAX) T = 25C A 10 Single Pulse 0.01 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 0.1 1 10 100 -V , DRAIN-SOURCE VOLTAGE (V) t1, PULSE DURATION TIME (sec) DS Fig. 2 Single Pulse Maximum Power Dissipation Fig. 1 SOA, Safe Operation Area 2 of 7 DMP3008SFG October 2017 Diodes Incorporated www.diodes.com Document number: DS35598 Rev. 6 - 3 ADVANCE INFORMATION -I , DRAIN CURRENT (A) D P , PEAK TRANSIENT POIWER (W) (PK)