NOT RECOMMENDED FOR NEW DESIGN DMP3015LSS USE DMP3007LSS SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance max ID V R max (BR)DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 11m V = -10V -13A GS Fast Switching Speed -30V Low Input/Output Leakage 17m V = -4.5V -9.9A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: SO-8 (R ) yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(on) ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Applications Terminals: FinishMatte Tin Annealed over Copper Backlighting Leadframe. Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.074g (Approximate) DC-DC Converters D SO-8 S D S D S D G G D Top View S Top View Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP3015LSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP3015LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Drain Current (Note 5) Steady T = +25C -13 A I A D State -9.75 T = +70C A Pulsed Drain Current (Note 6) -45 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 2.5 W P D Thermal Resistance, Junction to Ambient R 50 C/W JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on 2 oz. copper pads on FR-4 PCB with R = 50C/W. JA 6. Pulse width 10s, duty cycle 1%. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 I A V = -30V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1 -2 V V = V , I = -250A GS(th) DS GS D 11 V = -10V, I = -13A GS D 9 Static Drain-Source On-Resistance R m DS (ON) 17 V = -4.5V, I = -10A GS D 14 Forward Transconductance g 15 S V = -15V, I = -8A fs DS D Diode Forward Voltage (Note 7) V -0.5 -1.1 V V = 0V, I = -2.1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 2748 pF iss V = -20V, V = 0V DS GS Output Capacitance C 357 pF oss f = 1.0MHz Reverse Transfer Capacitance 356 pF C rss V = 0V, V = 0V DS GS Gate Resistance R 2.0 G f = 1.0MHz SWITCHING CHARACTERISTICS (Note 8) V = -10V, V = -4.5V, I = -13A 30.0 DS GS D Total Gate Charge Q g 60.4 V = -10V, V = -10V, I = -13A DS GS D nC Gate-Source Charge Q 7.2 V = -10V, V = -10V, I = -13A gs DS GS D Gate-Drain Charge 16.4 Q V = -10V, V = -10V, I = -13A gd DS GS D Turn-On Delay Time 11.2 t d(on) Rise Time 12.4 t V = -15V, V = -10V, r DS GS ns Turn-Off Delay Time 104.9 I = -1A, R = 6.0 t D G d(off) Fall Time 61.7 t f Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 December 2018 DMP3015LSS Diodes Incorporated www.diodes.com Document number: DS31472 Rev. 7 - 3