DMP3036SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low R ensures on state losses are minimized. I max DS(ON) D V R max (BR)DSS DS(ON) T = +25C Small form factor thermally efficient package enables higher A density end products. 20m V = -10V - 8.7 A GS -30V Occupies just 33% of the board area occupied by SO-8 enabling -7.2 A 29m VGS = -5V smaller end product. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: POWERDI3333-8 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic,Gree Molding Compound. (R ) and yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Backlighting Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.03 grams (Approximate) POWERDI 3333-8 D Pin 1 S S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP3036SFG-7 POWERDI3333-8 2,000/Tape & Reel DMP3036SFG-13 POWERDI3333-8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3036SFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C -8.7 A I A D State -7.0 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C -12.7 A t<10s A I D -10.1 T = +70C A Steady T = +25C -7.2 A I A D State -5.8 T = +70C A Continuous Drain Current (Note 6) V = -5V GS T = +25C -10.5 A t<10s A I D -8.4 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -80 A DM Maximum Continuous Body Diode Forward Current (Note 6) I -3.6 A S Avalanche Current (Note 7) L=0.3 mH I -17.5 A AS Avalanche Energy (Note 7) L=0.3 mH E 64 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 0.95 W P D Steady State 137 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 65 C/W Total Power Dissipation (Note 6) 2.3 W P D Steady State 55 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 26 C/W Thermal Resistance, Junction to Case (Note 6) R 6.14 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -30 - - V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current - - -1.0 A I V = -30V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -1.0 -2.0 -2.5 V V V = V , I = -250A GS(th) DS GS D - 13 20 V = -10V, I = -8A GS D Static Drain-Source On-Resistance m R DS (ON) - 18.4 29 V = -5V, I = -5A GS D Diode Forward Voltage V - -0.74 -1.0 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C - 1931 - pF iss V = -15V, V = 0V, DS GS Output Capacitance C - 226 - pF oss f = 1.0MHz Reverse Transfer Capacitance - 168 - pF Crss Gate Resistance - 10.9 - R V = 0V, V = 0V, f = 1MHz g DS GS - 8.8 - nC Total Gate Charge V = -5V Q GS g - 16.5 - nC Total Gate Charge V = -10V Q GS g V = -15V, V = -10V, I = -10A DS GS D Gate-Source Charge - 2.6 - nC Q gs Gate-Drain Charge Q - 3.6 - nC gd Turn-On Delay Time t - 8.2 - ns D(on) Turn-On Rise Time t - 14 - ns r V = -10V, V = -15V, GEN DD Turn-Off Delay Time t - 65 - ns R = 3, I = -10A D(off) GEN D Turn-Off Fall Time t - 31.6 - ns f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. UIS in production with L = 0.1mH, starting T = +25C. A 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated 2 of 6 DMP3036SFG January 2015 Diodes Incorporated www.diodes.com Document number: DS37038 Rev. 4 - 2 ADVANCE INFORMATION