DMP3036SSD-13 Diodes Incorporated

DMP3036SSD-13 electronic component of Diodes Incorporated
DMP3036SSD-13 Diodes Incorporated
DMP3036SSD-13 MOSFETs
DMP3036SSD-13  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DMP3036SSD-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP3036SSD-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. DMP3036SSD-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: Diodes Incorporated MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss
Datasheet: DMP3036SSD-13 Datasheet (PDF)
Price (USD)
1: USD 0.642 ea
Line Total: USD 0.64 
Availability : 1041
  
Ship by Tue. 09 Sep to Fri. 12 Sep
QtyUnit Price
1$ 0.642
10$ 0.5036
30$ 0.4428
100$ 0.276
500$ 0.226
1000$ 0.2129

Availability 1041
Ship by Tue. 09 Sep to Fri. 12 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.642
10$ 0.5036
30$ 0.4428
100$ 0.276
500$ 0.226
1000$ 0.2129

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMP3036SSD-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP3036SSD-13 and other electronic components in the MOSFETs category and beyond.

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DMP3036SSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low On-Resistance D V R (BR)DSS DS(on) max T = +25C C Low Input Capacitance 20m V = -10V -18.0A GS -30V Fast Switching Speed -15.0A 29m V = -5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching performance, DS(on) Case: SO-8 making it ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe Power Management Functions Solderable per MIL-STD-202, Method 208 e3 Backlighting Weight: 0.074 grams (Approximate) SO-8 D1 D2 SO-8 S1 D1 Pin1 G1 D1 G1 G2 S2 D2 G2 D2 S1 S2 Top View Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP3036SSD-13 SO-8 2,500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3036SSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -30 V V DSS Gate-Source Voltage 25 V V GSS T = +25C -18.0 C I A D -14.3 T = +70C C Continuous Drain Current (Note 6) V = -10V GS T = +25C A -10.6 A I D -8.5 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) -80 A I DM Maximum Continuous Body Diode Forward Current (Note 6) -3.6 A I S Avalanche Current (Note 7) L = 0.3mH I -17.5 A AS Avalanche Energy (Note 7) L = 0.3mH E 64 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 1.2 TA = +25C Total Power Dissipation (Note 5) W PD 0.9 T = +70C A Steady State 104 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 45 1.7 T = +25C A Total Power Dissipation (Note 6) W P D 1.1 T = +70C A Steady State 72 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 37 C/W Thermal Resistance, Junction to Case (Note 6) 13 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -30 - - V V = 0V, I = -1mA DSS GS D Zero Gate Voltage Drain Current T = +25C I - - -1.0 A V = -30V, V = 0V J DSS DS GS Gate-Source Leakage I - - 100 nA V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1.0 -1.7 -3.0 V V = V , I = -250A GS(th) DS GS D 16 20 V = -10V, I = -9A - GS D Static Drain-Source On-Resistance m R DS (ON) - 22 29 V = -5V, I = -7A GS D Diode Forward Voltage - -0.7 -1.0 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance - 1931 - pF C iss V = -15V, V = 0V, DS GS Output Capacitance - 226 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 168 - pF C rss Gate Resistance - 10.9 - R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge at V = -5V Q - 8.8 - nC V = -15V, I = -10A GS g DS D Total Gate Charge at V = -10V Q - 16.5 - nC GS g Gate-Source Charge Q - 2.6 - nC V = -15V, I = -10A gs DS D Gate-Drain Charge Q - 3.6 - nC gd Turn-On Delay Time - 8.2 - ns tD(on) Turn-On Rise Time - 14 - ns t V = -10V, V = -15V, r GEN DD Turn-Off Delay Time - 65 - ns R = 3, I = -10A t GEN D D(off) Turn-Off Fall Time - 31.6 - ns t f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 DMP3036SSD November 2014 Diodes Incorporated www.diodes.com Document number: DS37349 Rev.1 - 2 NEW PRODUCT NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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