DMP3050LSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = 25C A Fast Switching Speed 45m V = -10V GS -4.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 80m V = -4.5V -3.5A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(on) Case: SO-8 ideal for high efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections Indicator: See diagram Backlighting Terminals: Finish Matte Tin annealed over Copper leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.008 grams (approximate) Drain SO-8 S D S D Gate S D G D Source Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP3050LSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3050LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage (Note 4) V 25 V GSS Steady T = 25C A -4.8 I A D State -3.8 T = 70C A Continuous Drain Current (Note 5) V = -10V GS T = 25C -6.3 A t<10s I A D -4.9 T = 70C A Maximum Continuous Body Diode Forward Current (Note 6) I -3.0 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -30 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = 25C 1.7 A Total Power Dissipation (Note 5) P W D 1.1 T = 70C A Steady State 73 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 37 Operating and Storage Temperature Range -55 to 150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage -30 - - V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I - - -1 A V = -30V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V -1.0 - -2.0 V V = V , I = -250A GS(th) DS GS D - 36 45 V = -10V, I = -6A GS D Static Drain-Source On-Resistance m R DS (ON) - 61 80 V = -4.5V, I = -5A GS D Forward Transfer Admittance Y - 4.8 - S V = -10V, I = -5.3A fs DS D Diode Forward Voltage V - -0.7 -1.0 V V = 0V, I = -1.7A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C - 620 - pF iss V = -15V, V = 0V, DS GS Output Capacitance - 83 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 62 - pF C rss Gate resistance - 10.8 - R V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = -4.5V) Q - 5.1 - nC GS g Total Gate Charge (V = -10V) Q - 10.5 - nC GS g V = -15V, I = -6A DS D Gate-Source Charge Q - 1.8 - nC gs Gate-Drain Charge Q - 1.9 - nC gd Turn-On Delay Time t - 6.8 - ns D(on) Turn-On Rise Time t - 4.9 - ns r V = -15V, V = -10V, DD GS Turn-Off Delay Time t - 28.4 - ns R = 6 , I = -1A D(off) G D Turn-Off Fall Time - 12.4 - ns t f Reverse Recovery Time - 14 - ns t rr I = 12A, di/dt = 500A/s F Reverse Recovery Charge - 11 - nC Q rr Notes: 4. AEC-Q101 V maximum is 20V GS 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 September 2012 DMP3050LSS Diodes Incorporated www.diodes.com Document number: DS35647 Rev. 4 - 2 NEW PRODUCT