X-On Electronics has gained recognition as a prominent supplier of DMP3056LSS-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP3056LSS-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP3056LSS-13 Diodes Incorporated

DMP3056LSS-13 electronic component of Diodes Incorporated
DMP3056LSS-13 Diodes Incorporated
DMP3056LSS-13 MOSFETs
DMP3056LSS-13  Semiconductors

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See Product Specifications
Part No. DMP3056LSS-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET PMOS SINGLE P-CHANNL 30V 7.1A
Datasheet: DMP3056LSS-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2122 ea
Line Total: USD 1.06 
Availability - 2357
Ship by Mon. 23 Jun to Thu. 26 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2357
Ship by Mon. 23 Jun to Thu. 26 Jun
MOQ : 5
Multiples : 5
5 : USD 0.2122
50 : USD 0.1696
150 : USD 0.1113
500 : USD 0.0895
2500 : USD 0.0809
5000 : USD 0.0765

65264
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 0.57
10 : USD 0.44
100 : USD 0.2829
500 : USD 0.2233
1000 : USD 0.1804
2500 : USD 0.1793
50000 : USD 0.1727

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
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We are delighted to provide the DMP3056LSS-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP3056LSS-13 and other electronic components in the MOSFETs category and beyond.

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DMP3056LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOP-8L 45m V = -10V Case Material: Molded Plastic, Green Molding Compound. GS UL Flammability Classification Rating 94V-0 65m V = -4.5V GS Moisture Sensitivity: Level 1 per J-STD-020D Low Gate Threshold Voltage Terminals Connections: See Diagram Low Input Capacitance Terminals: Finish - Matte Tin annealed over Copper lead Fast Switching Speed frame. Solderable per MIL-STD-202, Method 208 Low Input/Output Leakage Marking Information: See Page 4 Lead Free By Design/RoHS Compliant (Note 2) Ordering Information: See Page 4 Gree Device (Note 4) Weight: 0.072g (approximate) Qualified to AEC-Q101 Standards for High Reliability SOP-8L S D S D S D G D TOP VIEW TOP VIEW Internal Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Drain Current (Note 1) Steady T = 25C -7.1 A I A D State -6.0 T = 70C A Pulsed Drain Current (Note 3) -20 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) P 2.5 W D Thermal Resistance, Junction to Ambient (Note 1) 50 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 1. Device mounted on 1 x 1 2 oz. Copper pads on 2 x 2 FR-4 PCB. 2. No purposefully added lead. 3. Pulse width 10S, Duty Cycle 1%. 4. Diodes Inc. sGree policy can be found on our website at DMP3056LSS Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -30V, V = 0V DSS DS GS V = 20V, V = 0V 100 GS DS Gate-Source Leakage I nA GSS 800 V = 25V, V = 0V GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage -1 1.7 -2.1 V V V = V , I = -250A GS(th) DS GS D 45 V = -10V, I = -6.0A GS D Static Drain-Source On-Resistance R m DS (ON) 65 V = -4.5V, I = -5.0A GS D Forward Transconductance g 8 S V = -10V, I = -5.3A fs DS D Diode Forward Voltage (Note 5) V -0.5 -1.2 V V = 0V, I = -1.7A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance C 722 pF iss V = -25V, V = 0V DS GS Output Capacitance C 114 pF oss f = 1.0MHz Reverse Transfer Capacitance C 92 pF rss V = 0V, V = 0V DS GS Gate Resistance R 3.3 G f = 1.0MHz SWITCHING CHARACTERISTICS V = -15V, V = -4.5V, DS GS Q 6.8 nC G I = -6A Total Gate Charge D Q 13.7 G V = -15V, V = -10V, DS GS Gate-Source Charge Q 1.6 nC GS I = -6A D Gate-Drain Charge Q 4.18 GD Turn-On Delay Time 6.4 t d(on) Rise Time 5.3 t V = -15V, V = -10V, r DS GS ns Turn-Off Delay Time 26.5 I = -1A, R = 6.0 t D G d(off) Fall Time 14.7 t f Notes: 5. Short duration pulse test used to minimize self-heating effect. 10 12 11 9 10 V = -10V GS V = 5V DS 8 Pulsed 9 V = -4.5V GS 7 8 6 7 6 5 5 4 T = 150C A V = -3.0V 4 GS T = 125C 3 A 3 T = 85C T = 25C A A 2 V = -1.5V GS 2 V = -1.0V T = -55C GS V = -2.5V A GS 1 1 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 1 1.5 2 2.5 3 3.5 4 -V , DRAIN-SOURCE VOLTAGE (V) -V , GATE SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 2 of 4 September 2008 DMP3056LSS Diodes Incorporated www.diodes.com Document number: DS31419 Rev. 6 - 2 NEW PRODUCT -I , DRAIN CURRENT (A) D -I , DRAIN CURRENT (A) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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