DMP3056LSSQ SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Low On-Resistance I D BV R DSS DS(ON) Max Low Gate Threshold Voltage TA = +25C -4.9A Low Input Capacitance 45m VGS = -10V -30V Fast Switching Speed 65m V = -4.5V -4.0A GS Low Input/Output Leakage 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The DMP3056LSSQ is suitable for automotive applications requiring specific change control this part is AEC-Q101 Description and Applications qualified, PPAP capable, and manufactured in IATF 16949 This MOSFET is designed to meet the stringent requirements of certified facilities. DMP3056LSSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS T = +25C -4.9 A Continuous Drain Current (Note 6) V = -10V I A GS D -3.9 TA = +70C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -25 A IDM Avalanche Current (Note 7) L = 0.1mH -17 A IAS Avalanche Energy (Note 7) L = 0.1mH 15 mJ EAS Thermal Characteristics Characteristic Symbol Value Unit T = +25C 1.2 A Total Power Dissipation (Note 5) W PD T = +70C 0.8 A Steady State 100 Thermal Resistance, Junction to Ambient (Note 5) C/W RJA t<10s 58 T = +25C 1.6 A Total Power Dissipation (Note 6) W PD T = +70C 1.0 A Steady State 77 Thermal Resistance, Junction to Ambient (Note 6) RJA t<10s 45 C/W Thermal Resistance, Junction to Case (Note 6) R 10 JC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -30 V BVDSS VGS = 0V, ID = -250A -1.0 A Zero Gate Voltage Drain Current TJ = +25C IDSS VDS = -30V, VGS = 0V Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1.0 -2.1 V V = V , I = -250A GS(TH) DS GS D 25 45 V = -10V, I = -6A GS D Static Drain-Source On-Resistance m RDS(ON) 39 65 V = -4.5V, I = -5A GS D Diode Forward Voltage V -0.75 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 969 pF iss VDS = -15V, VGS = 0V, Output Capacitance C pF oss 138 f = 1.0MHz Reverse Transfer Capacitance pF Crss 102 Gate Resistance 13 Rg VDS = 0V, VGS = 0V, f = 1MHz 17.3 nC Total Gate Charge (VGS = -10V) Qg VDS = -15V, ID = -7A 8.2 nC Total Gate Charge (VGS = -4.5V) Qg Gate-Source Charge Qgs 2.5 nC VDS = -15V, ID = -7A Gate-Drain Charge Q 2.8 nC gd Turn-On Delay Time t 4.7 ns D(ON) Turn-On Rise Time t 5 ns R VDS = -15V, VGS = -10V, Turn-Off Delay Time t 43 ns R = 2.15, R = 3 D(OFF) L GEN Turn-Off Fall Time t 20 ns F Body Diode Reverse Recovery Time 13.6 ns tRR IS = -7A, dI/dt = 100A/s Body Diode Reverse Recovery Charge 3.4 nC QRR IS = -7A, dI/dt = 100A/s Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 DMP3056LSSQ November 2019 Diodes Incorporated www.diodes.com Document number: DS41942 Rev. 4 - 2 NEW PRODUCT