DMP3098LQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(on) max Low Gate Threshold Voltage T = +25C A 70m V = -10V -3.8A Low Input Capacitance GS -30V 120m V = -4.5V -3.0A GS Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the on- PPAP Capable (Note 4) state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: SOT23 Power Management Functions Case Material: Molded Plastic, Green Molding Compound Analog Switch UL Flammability Classification Rating 94V-0 Load Switch Moisture Sensitivity: Level 1 per J-STD-020 Boost Switch Terminals: Finish Matte Tin annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT23 D Gate G S Source Top View Pin Configuration Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMP3098LQ-7 SOT23 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3098LQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C A -3.8 A Drain Current (Note 6) V = -10V I GS D State -2.9 T = +70C A Pulsed Drain Current (Note 7) -11 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 1.08 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 115 C/W A JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -800 nA V = -30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1.0 -1.8 -2.1 V V = V , I = -250 A GS(th) DS GS D V = -10V, I = -3.8A 56 70 GS D Static Drain-Source On-Resistance R m DS(ON) 98 120 V = -4.5V, I = -3.0A GS D Forward Transfer Admittance 3.6 S Y V = -5V, I = -2.7A fs DS D Diode Forward Voltage (Note 7) -1.26 V V V = 0V, I = -2.7A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 336 1008 pF C iss Output Capacitance 70 210 pF C V = -25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance 49 147 pF C rss Gate Resistance R 4.6 V = 0V, V = 0V, f = 1MHz G GS DS SWITCHING CHARACTERISTICS (Note 9) V = -15V, V = -4.5V, DS GS 4.0 8.0 I = -3.8A Total Gate Charge Q D g 7.8 nC V = -15V, V = -10V, DS GS Gate-Source Charge Q 1.0 gs I = -3.8A D Gate-Drain Charge Q 2.5 gd Turn-On Delay Time t 6.0 12.0 d(on) Rise Time t 5.0 10.0 r V = -15V, V = -10V, DS GS ns I = -1A, R = 6.0 Turn-Off Delay Time t 17.6 35.2 D G d(off) Fall Time 9.5 19.0 t f 2 Notes: 6. Device mounted on FR-4 PCB on 2 oz., 0.5 in. copper pads and t 5 sec. 7. Pulse width 10S, Duty Cycle 1%. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 5 June 2014 DMP3098LQ Diodes Incorporated www.diodes.com Document number: DS37337 Rev. 1 - 2 NEW PRODUCT