DMP3130LQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(ON) max Low Gate Threshold Voltage T = +25C A Low Input Capacitance -3.5A 77m V = -10V GS Fast Switching Speed -30V 95m V = -4.5V -3.0A GS Low Input/Output Leakage 150m V = -2.5V -2.4A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET has been designed to meet the stringent Case: SOT23 requirements of Automotive applications. It is qualified to AECQ101, Case Material: Molded Plastic, Green Molding Compound. supported by a PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Power Management Functions Leadframe. Solderable per MIL-STD-202, Method 208 Analog Switch Terminal Connections: See Diagram Weight: 0.009 grams (Approximate) SOT23 D D G G S S Top View Equivalent Circuit Top View Ordering Information (Note 5) Part Number Case Packaging DMP3130LQ-7 SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3130LQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C -3.5 A I A D State -2.6 T = +70C A Continuous Drain Current (Note 6) V = -4.5V GS T = +25C -4.1 A t<10s A I D -3.2 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I -1.6 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -20 A DM Thermal Characteristics Characteristic Symbol Value Units 0.7 T = +25C A Total Power Dissipation (Note 6) P W D 0.4 T = +70C A Steady State 184 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 115 1.3 T = +25C A Total Power Dissipation (Note 7) P W D 0.8 T = +70C A Steady State 94 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 61 C/W Thermal Resistance, Junction to Case 25 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -30V, V = 0V DSS DS GS Gate-Body Leakage I 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -0.6 -1.3 V V = V , I = -250A GS(TH) DS GS D 59 77 V = -10V, I = -4.2A GS D Static Drain-Source On-Resistance 73 95 m R V = -4.5V, I = -4A DS(ON) GS D 115 150 V = -2.5V, I = -3A GS D Forward Transconductance 8 S g V = -5V, I = -4A fs DS D Source-Drain Diode Forward Voltage -0.8 -1.25 V V V = 0V, I = -3.0A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 432 864 pF C iss V = -15V, V = 0V DS GS Output Capacitance C 87 174 pF oss f = 1.0MHz Reverse Transfer Capacitance C 62 124 pF rss Gate Resistance R 4.04 V = 0V, V = 0V, f = 1.0MHz G DS GS SWITCHING CHARACTERISTICS (Note 9) 5.9 11.8 V = -15V, V = -4.5V, I = -4.0A DS GS D Total Gate Charge Q G 12 24 VDS = -15V, VGS = -10V, ID = -4.0A nC Gate-Source Charge 1.0 2.0 Q GS V = -15V, V = -4.5V, I = -4.0A DS GS D Gate-Drain Charge 3.1 6.2 Q GD Turn-On Delay Time 4.6 9.2 t D(ON) Rise Time 6.5 13.0 t V = -15V, V = -10V, R DS GS ns Turn-Off Delay Time 27.8 55.6 t I = -1A, R = 6.0 D(OFF) D G Fall Time t 15.0 30.0 F Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing 2 of 6 DMP3130LQ March 2016 Diodes Incorporated www.diodes.com Document number: DS38728 Rev. 1 - 2