DMP34M4SPS Green 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production I D BV R DSS DS(ON) Thermally Efficient Package-Cooler Running Applications T = +25C C High Conversion Efficiency 3.8m V = -10V -87A GS Low R Minimizes On State Losses DS(ON) -30V 6.0m V = -5V -71A GS <1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation MOSFET is designed to minimize R and DS(ON) Mechanical Data yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. Case: PowerDI 5060-8 Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Switch Terminal Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 D S D Pin1 S D D G S G D S Top View Internal Schematic Bottom View Top View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMP34M4SPS-13 PowerDI5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMP34M4SPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS T = +25C -87 C I A Continuous Drain Current, V = -10V (Note 7) (Package Limited) D GS -71 T = +70C C T = +25C -21 A A I Continuous Drain Current, V = -10V (Note 6) D GS -17 T = +70C A Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) I -350 A DM Maximum Continuous Body Diode Forward Current (Note 6) I -2.9 A S Pulsed Body Diode Forward Current (380s Pulse, Duty Cycle = 1%) I -350 A SM Avalanche Current, L = 0.1mH (Note 8) I -60 A AS Avalanche Energy, L = 0.1mH (Note 8) 180 mJ EAS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.5 W P D Steady State Thermal Resistance, Junction to Ambient (Note 5) 94 C/W R JA Total Power Dissipation (Note 6) 3.0 W P D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 47 C/W JA Total Power Dissipation (Note 7) 100 W P D Thermal Resistance, Junction to Case (Note 7) R 1.4 C/W JC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -24V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage -1.6 -2.6 V V V = V , I = -250A GS(TH) DS GS D 2.9 3.8 V = -10V, I = -20A GS D Static Drain-Source On-Resistance m R DS(ON) 4.9 6.0 V = -5V, I = -20A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 3,775 pF iss V = -15V, V = 0V DS GS 932 Output Capacitance C pF oss f = 1MHz Reverse Transfer Capacitance C 500 pF rss Gate Resistance 21 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge 127 nC Q g V = -15V, V = -10V, DS GS Gate-Source Charge 24.5 nC Q gs I = -20A D Gate-Drain Charge 28.5 nC Q gd Turn-On Delay Time 6.9 ns t D(ON) 4.0 Turn-On Rise Time t ns V = -15V, V = -10V, R DD GEN Turn-Off Delay Time t 372 ns R = 3, I = -20A D(OFF) GEN D 160 Turn-Off Fall Time t ns F Reverse Recovery Time t 26.5 ns RR I = -20A, di/dt = 500A/s F Reverse Recovery Charge Q 37.3 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMP34M4SPS February 2019 Diodes Incorporated www.diodes.com Document number: DS39884 Rev. 5 - 2