DMP45H21DHE 450V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low Gate Drive D BV R DSS DS(ON) T = +25C Low Input Capacitance C Fast Switching Speed -450V 21 V = -10V -0.6A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This 450V enhancement mode P-channel MOSFET provides users Mechanical Data with a competitive specification offering efficient power handling Case: SOT223 capability, high impedance and is free from thermal runaway and Case Material: Molded Plastic, Green Molding Compound. thermally induced secondary breakdown. Applications benefiting from UL Flammability Classification Rating 94V-0 this device include a variety of Telecom and general high-voltage Moisture Sensitivity: Level 1 per J-STD-020 switching circuits. Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Applications e3 Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) Load Switching Uninterrupted Power Supply D SOT223 G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number Qualification Case Packaging DMP45H21DHE-13 Standard SOT223 2,500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP45H21DHE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -450 V DSS Gate-Source Voltage V 30 V GSS T = +25C I -0.6 A C D Continuous Drain Current (Note 6) V = 10V GS T = +70C I -0.4 A C D Pulsed Drain Current (10s pulse, duty cycle = 1%)(Note5) -1.2 A I DM Maximum Body Diode Continuous Current (Note5) -0.9 A I S Avalanche Energy (Note 8) L=60mH 30 mJ E AS Avalanche Current (Note 8) L=60mH -1 A I AS dv/dt 26 V/ns Peak Diode Recovery dv/dt (I 1.0A, di/dt 100A/s) SD Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit TC = +25C 12.5 Total Power Dissipation (Note 6) W P D TC = +70C 8 Thermal Resistance, Junction to Ambient (Note 5) R 108 C/W JA C/W Thermal Resistance, Junction to Case (Note 6) R 10 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV -450 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -450V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 30V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage -3.0 -4 -5.0 V V V = V , I = -250A GS(TH) DS GS D Static Drain-Source On-Resistance 13 21 R V = -10V, I = -0.3A DS(ON) GS D Diode Forward Voltage -0.84 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 1,003 C iss 25.5 Output Capacitance C pF V = -25V, V = 0V, f = 1.0MHz oss DS GS 2.3 Reverse Transfer Capacitance C rss 615 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 4.2 Total Gate Charge Q g 1.1 Gate-Source Charge nC Qgs VDS = -225V, ID = -1A, VGS = -10V 2.1 Gate-Drain Charge Q gd Turn-On Delay Time 17 t D(ON) Turn-On Rise Time 22 t R ns V = -225V, R = 3.0, I = -1A DD G D Turn-Off Delay Time 18 t D(OFF) 21 Turn-Off Fall Time t F V = 0V, V = -200V, I = -1A, GS DD S Body Diode Reverse Recovery Time ns t RR 113 di/dt = 100A/s V = 0V, V = -200V, I = -1A, GS DD S Body Diode Reverse Recovery Charge Q nC RR 540 di/dt = 100A/s Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMP45H21DHE September 2017 Diodes Incorporated www.diodes.com Document Number DS38632 Rev. 3 - 2 ADVANCE INFORMATION ADVANCED INFORMATION