DMP6023LEQ Green 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D BV R Max DSS DS(ON) Fast Switching Speed T = +25C A -7A 28m V = -10V Low Threshold GS -60V 35m V = -4.5V -6.2A GS Low Gate Drive Low Input Capacitance Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: SOT223 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals Connections: See Diagram Below Power Management Functions Terminals: Finish - Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) D SOT223 G S Pin Out - Top View Equivalent Circuit Top View Ordering Information (Note 5) Part Number Case Packaging DMP6023LEQ-13 SOT223 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP6023LEQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS TA = +25C -7 I A D -5.6 T = +70C A Continuous Drain Current (Note 5) V = -10V GS T = +25C -18.2 C A I D -14.5 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -50 A DM Maximum Continuous Body Diode Forward Current (Note 5) I -2 A S Avalanche Current, L = 0.1mH -35.5 A I AS Avalanche Energy, L = 0.1mH 62.9 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 2 A Total Power Dissipation (Note 5) P W D 1.3 T = +70C A Thermal Resistance, Junction to Ambient (Note 5) 60 C/W R JA Total Power Dissipation (Note 5) 17.3 W T = +25C P C D Thermal Resistance, Junction to Case (Note 5) R 7.2 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV -60 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1 A V = -60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V -1 -3 V V = V , I = -250A GS(TH) DS GS D 28 VGS = -10V, ID = -5A Static Drain-Source On-Resistance m RDS(ON) 35 V = -4.5V, I = -4A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance pF C 2569 iss V = -30V, V = 0V, DS GS Output Capacitance pF C 179 oss f = 1MHz Reverse Transfer Capacitance pF C 143 rss 8 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 26.5 Total Gate Charge (V = -4.5V) Q nC GS g 53.1 Total Gate Charge (V = -10V) Q nC GS g V = -30V, I = -5A DS D 7.1 Gate-Source Charge Q nC gs 12.6 Gate-Drain Charge Q nC gd 6 Turn-On Delay Time ns t D(ON) Turn-On Rise Time 7.1 ns t V = -10V, V = -30V, R GS DS Turn-Off Delay Time 110 ns R = 3, I = -5A t g D D(OFF) Turn-Off Fall Time 62 ns t F Body Diode Reverse Recovery Time 20 ns t RR I = -5A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 14 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 7 DMP6023LEQ July 2017 Diodes Incorporated www.diodes.com Document number: DS39935 Rev. 1 - 2 ADVANCE INFORMATION