X-On Electronics has gained recognition as a prominent supplier of DMP6023LEQ-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP6023LEQ-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP6023LEQ-13 Diodes Incorporated

DMP6023LEQ-13 electronic component of Diodes Incorporated
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Part No.DMP6023LEQ-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 41V-60V
Datasheet: DMP6023LEQ-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.104 ea
Line Total: USD 1.1 
Availability - 1821
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1821
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 1.104
10 : USD 0.82
100 : USD 0.5865
500 : USD 0.5279
1000 : USD 0.4416
2500 : USD 0.4324

   
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We are delighted to provide the DMP6023LEQ-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP6023LEQ-13 and other electronic components in the MOSFETs category and beyond.

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DMP6023LEQ Green 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D BV R Max DSS DS(ON) Fast Switching Speed T = +25C A -7A 28m V = -10V Low Threshold GS -60V 35m V = -4.5V -6.2A GS Low Gate Drive Low Input Capacitance Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: SOT223 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals Connections: See Diagram Below Power Management Functions Terminals: Finish - Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) D SOT223 G S Pin Out - Top View Equivalent Circuit Top View Ordering Information (Note 5) Part Number Case Packaging DMP6023LEQ-13 SOT223 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP6023LEQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS TA = +25C -7 I A D -5.6 T = +70C A Continuous Drain Current (Note 5) V = -10V GS T = +25C -18.2 C A I D -14.5 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -50 A DM Maximum Continuous Body Diode Forward Current (Note 5) I -2 A S Avalanche Current, L = 0.1mH -35.5 A I AS Avalanche Energy, L = 0.1mH 62.9 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 2 A Total Power Dissipation (Note 5) P W D 1.3 T = +70C A Thermal Resistance, Junction to Ambient (Note 5) 60 C/W R JA Total Power Dissipation (Note 5) 17.3 W T = +25C P C D Thermal Resistance, Junction to Case (Note 5) R 7.2 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV -60 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1 A V = -60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V -1 -3 V V = V , I = -250A GS(TH) DS GS D 28 VGS = -10V, ID = -5A Static Drain-Source On-Resistance m RDS(ON) 35 V = -4.5V, I = -4A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance pF C 2569 iss V = -30V, V = 0V, DS GS Output Capacitance pF C 179 oss f = 1MHz Reverse Transfer Capacitance pF C 143 rss 8 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 26.5 Total Gate Charge (V = -4.5V) Q nC GS g 53.1 Total Gate Charge (V = -10V) Q nC GS g V = -30V, I = -5A DS D 7.1 Gate-Source Charge Q nC gs 12.6 Gate-Drain Charge Q nC gd 6 Turn-On Delay Time ns t D(ON) Turn-On Rise Time 7.1 ns t V = -10V, V = -30V, R GS DS Turn-Off Delay Time 110 ns R = 3, I = -5A t g D D(OFF) Turn-Off Fall Time 62 ns t F Body Diode Reverse Recovery Time 20 ns t RR I = -5A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 14 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 7 DMP6023LEQ July 2017 Diodes Incorporated www.diodes.com Document number: DS39935 Rev. 1 - 2 ADVANCE INFORMATION

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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