DMP6110SVT-7 Diodes Incorporated

DMP6110SVT-7 electronic component of Diodes Incorporated
DMP6110SVT-7 Diodes Incorporated
DMP6110SVT-7 MOSFETs
DMP6110SVT-7  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DMP6110SVT-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP6110SVT-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. DMP6110SVT-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 60V P-Ch Enh FET 60Vds 20Vgs
Datasheet: DMP6110SVT-7 Datasheet (PDF)
Price (USD)
5: USD 0.5806 ea
Line Total: USD 2.9 
Availability : 2817
  
Ship by Fri. 05 Sep to Wed. 10 Sep
QtyUnit Price
5$ 0.5806
50$ 0.3426
150$ 0.2725
500$ 0.2279
3000$ 0.208
6000$ 0.1962

Availability 2817
Ship by Fri. 05 Sep to Wed. 10 Sep
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.5806
50$ 0.3426
150$ 0.2725
500$ 0.2279
3000$ 0.208
6000$ 0.1962


Availability 517
Ship by Wed. 27 Aug to Fri. 29 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9
10$ 0.6212
100$ 0.3894
500$ 0.3003
1000$ 0.2651
3000$ 0.2288
6000$ 0.2156
9000$ 0.2145

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMP6110SVT-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP6110SVT-7 and other electronic components in the MOSFETs category and beyond.

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DMP6110SVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D V R Max (BR)DSS DS(ON) Low Input Capacitance T = +25C C Fast Switching Speed 105m V = -10V -7.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) GS Halogen and Antimony Free. Green Device (Note 3) -60V 130m V = -4.5V -6.5A Qualified to AEC-Q101 Standards for High Reliability GS Mechanical Data Description and Applications Case: TSOT26 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic,Gree Molding Compound. (R ) and yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Backlighting Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 e3 DC-DC Converters Weight: 0.008 grams (Approximate) D TSOT26 D 1 6 D D 2 5 D G 3 4 G S S Top View Device Schematic Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP6110SVT-7 TSOT26 3,000/Tape & Reel DMP6110SVT-13 TSOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP6110SVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS T = +25C -7.3 C Continuous Drain Current (Note 6) V = -10V I A GS D -5.8 T = +70C C Maximum Body Diode Forward Current (Note 6) A I S Pulsed Drain Current (380s Pulse, 1% Duty Cycle) -24 A I DM Avalanche Current (Note 7) L = 0.1mH -19 A I AS Repetitive Avalanche Energy (Note 7) L = 0.1mH E 18 mJ AS Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit 1.2 TA = +25C Total Power Dissipation (Note 5) P W D 0.75 T = +70C A Steady state 105 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 60 C/W 1.8 T = +25C A Total Power Dissipation (Note 6) P W D 1.1 T = +70C A Steady state 69 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 39 C/W Thermal Resistance, Junction to Case (Note 6) 15 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -60 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1 -3 V V = V , I = -250A GS(TH) DS GS D 105 VGS = -10V, ID = -4.5A Static Drain-Source On-Resistance R m DS(ON) 130 V = -4.5V, I = -3.5A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 969 C iss Output Capacitance 57 pF C V = -30V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance 44 C rss 13.7 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 8.2 Total Gate Charge (V = -4.5V) Q GS g 17.2 Total Gate Charge (V = -10V) Q GS g nC V = -30V, I = -12A DS D 3.0 Gate-Source Charge Q gs 3.1 Gate-Drain Charge Qgd 4.4 Turn-On Delay Time t D(ON) Turn-On Rise Time 23 t V = -10V, V = -30V, R = 3, R GS DS GEN ns Turn-Off Delay Time 34 I = -12A t D D(OFF) Turn-Off Fall Time 42 t F Body Diode Reverse Recovery Time 13.2 ns t RR I = -12A, dI/dt = 100A/s S Body Diode Reverse Recovery Charge Q 6.18 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMP6110SVT April 2015 Diodes Incorporated www.diodes.com Document number: DS37594 Rev. 2 - 2 NEW PRODUCT NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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